Power Supply Systems with Phase-Shifting Coupler for Plasma Processes

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Solution Overview

Problem

Power supply systems for high-frequency applications, such as plasma processes and gas laser systems, face challenges in efficiently managing abrupt changes in load impedance and power requirements, leading to potential transistor overheating and damage due to reflected power, especially at high frequencies where bulky circulators are impractical.

Innovation Solution

A power supply system incorporating a phase-shifting coupler unit and field effect transistors with a layered semiconductor structure, which allows for phase-shifted power handling and reduced parasitic capacitance, enabling stable operation and higher power densities without overheating, even during mismatching conditions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If multiple amplifiers are used to generate high-frequency power, then the total power output is increased, but the system complexity and device size increase

Engineering Contradiction:
Improvetotal power outputVSAvoidsystem complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The patent combines multiple amplifier paths into a single integrated power supply system with a unified control unit that manages all amplifier stages. This merging approach achieves the required total power output while reducing system complexity compared to using separate amplifier systems, as the shared control and monitoring infrastructure eliminates redundant components.

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If circulators are used to absorb reflected power, then the amplifiers are protected from damage, but the device size becomes bulky and impractical at high frequencies

Engineering Contradiction:
Improveamplifier protectionVSAvoiddevice size
Core Design Contradiction:
ReliabilityVSVolume of moving object

Solution Approach 1:

The patent extracts the reflected power management function from traditional bulky circulator devices and implements it through a compact integrated control system that monitors amplifier output and dynamically adjusts operating parameters. This extraction approach maintains amplifier protection while eliminating the need for large circulator components, making the system practical for high-frequency applications where space is constrained.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the operational parameters of the amplifiers dynamically in response to detected reflected power conditions. By adjusting amplifier gain, frequency, or phase parameters in real-time, the system protects amplifiers from damage without requiring physical circulator devices, thereby maintaining compact dimensions while ensuring reliability.

Inventive Principle:
Principle #35Parameter changes

3Power

If the amplifier operates in the back-off range to control output power, then the output power is reduced, but the amplifier efficiency decreases and the transistor becomes warmer

Engineering Contradiction:
Improveoutput powerVSAvoidtransistor temperature
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The patent implements dynamic operation of the amplifier by continuously adjusting operating parameters such as supply voltage, bias conditions, and modulation depth based on the required output power level. This dynamic adaptation allows the amplifier to maintain higher efficiency even when operating below maximum power output, thereby reducing transistor temperature compared to static back-off operation.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes multiple operational parameters simultaneously to optimize amplifier efficiency at different power levels. By adjusting supply voltage, bias current, and modulation characteristics in coordination, the system maintains better thermal performance across the full power range than traditional fixed-back-off approaches, reducing transistor temperature while controlling output power.

Inventive Principle:
Principle #35Parameter changes

4Temperature

If the supply voltage is reduced to prevent transistor overheating, then the maximum output power is limited, but the system cannot handle sudden load changes effectively

Engineering Contradiction:
Improvetransistor temperatureVSAvoidresponse speed to load changes
Core Design Contradiction:
TemperatureVSSpeed

Solution Approach 1:

The patent implements preliminary monitoring of load conditions and amplifier performance parameters to detect potential mismatch or overload situations before they cause overheating. By taking preliminary protective actions such as preemptive power reduction or load matching adjustments, the system prevents temperature excursions without needing to continuously limit maximum power, thereby maintaining fast response capability when actual load changes occur.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent employs real-time feedback control that continuously monitors amplifier output, load conditions, and transistor temperature. This feedback mechanism allows the system to maintain higher supply voltages and maximum power capability while providing rapid response to load changes by dynamically adjusting operating parameters based on actual conditions, thus resolving the contradiction between temperature control and response speed.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS10354839B2Power supply systems and methods for generating power with multiple amplifier paths
Publication Date: 2019.07.16 TRUMPF PATENTABTEILUNG
  • US10354839B2 patent drawing
  • US10354839B2 patent drawing
  • US10354839B2 patent drawing

AI summary

A power supply system includes a power converter configured to generate a high-frequency power signal and be connected to a load to supply a plasma process or gas laser process with power. The power converter includes at least one amplifier stage having first and second amplifier paths each having an amplifier. The first and second amplifier path are connected to a phase-shifting coupler unit that is configured to couple phase-shifted output signals from the first and second amplifier paths to form the high-frequency power signal. At least one amplifier of the first and second amplifier paths includes a field effect transistor implemented in a semiconductor device with a semiconductor structure having a substantially layered construction, and the semiconductor device includes a channel, a current flowing in the channel substantially in parallel with layers of the semiconductor structure.