P-type Diamond N-type AlGaN Electron Emitter
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Solution Overview
Problem
Current electron-emitting elements face challenges in achieving high efficiency and stability due to issues such as hydrogen desorption, cesium desorption, and difficulty in introducing high concentrations of p-type impurities, leading to short operational life and manufacturing complexities.
Innovation Solution
An electron-emitting element comprising a p-type diamond member and an n-type semiconductor member, specifically AlGaN, which eliminates the need for hydrogen termination and cesium, allowing for high-efficiency electron emission without stability issues and easy manufacturing, with a configuration that includes a wide bandgap p-type diamond and n-type AlGaN, facilitating efficient electron emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional electron-emitting elements use hydrogen termination or cesium to enhance electron emission, then electron emission efficiency is improved, but stability deteriorates due to hydrogen desorption and cesium desorption
Solution Approach 1:
The invention removes hydrogen termination and cesium from the electron-emitting element structure. By extracting these unstable components that cause desorption issues, the patent achieves stable long-term operation while maintaining high electron emission efficiency through the p-type diamond/n-type AlGaN heterostructure alone
Solution Approach 2:
The invention uses a composite structure of p-type diamond and n-type AlGaN materials. This material combination creates a stable heterostructure with favorable energy band alignment that enables efficient electron emission without requiring hydrogen termination or cesium, thereby achieving both high productivity and reliability
2Productivity
If high concentrations of p-type impurities are introduced to improve electron emission, then emission efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The invention optimizes the impurity concentration parameters within a specific range (1×10^16 to 1×10^19 atoms/cm³ for p-type diamond and 1×10^17 to 1×10^20 atoms/cm³ for n-type AlGaN). By controlling parameters within favorable ranges rather than requiring extreme high concentrations, the patent achieves high electron emission efficiency while maintaining ease of manufacture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a stable and long-lasting electron-emitting element with high efficiency, easy manufacturing, and the ability to emit electrons efficiently by leveraging the large band energy difference between the semiconductor and diamond members.
Implementation Method 1
there is an electron-emitting element that emits electrons based on incident light
Data Source
AI summary
According to one embodiment, an electron-emitting element includes a first member and a second member. The first member includes a semiconductor member of an n-type. The second member includes a diamond member a p-type and includes at least one selected from the group consisting of diamond and graphite. The semiconductor member includes at least one selected from the group consisting of a first material, a second material, and a third material. The first material includes nitrogen and at least one selected from the group consisting of B, Al, In, and Ga. The second material includes at least one selected from the group consisting of ZnO and ZnMgO. The third material includes at least one selected from the group consisting of BaTiO3, PbTiO3, Pb(Zrx, Ti1-x)O3, KNbO3, LiNbO3, LiTaO3, NaxWO3, Zn2O3, Ba2NaNb5O5, Pb2KNb5O15, and Li2B4O7.