Angled Ion Beam Monolayer Deposition for 3D Substrate Doping
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Solution Overview
Problem
Conventional substrate processing techniques, such as ion implantation, struggle to effectively dope three-dimensional devices with vertical, re-entrant, or over-hanging surfaces due to limitations in accessing these areas, leading to incomplete or uneven doping.
Innovation Solution
A processing apparatus and method utilizing a combination of angled ion beams and molecular beams to form monolayers on three-dimensional substrate features, allowing for the deposition of dopant oxides and encapsulating layers without the need for masks, and enabling uniform coverage of complex surface topologies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If conventional ion implantation is used for doping, then the process is simple and direct, but vertical surfaces, re-entrant surfaces, and over-hanging surfaces are inaccessible to dopant ions
Solution Approach 1:
The patent transitions from conventional vertical ion implantation to oblique-angle ion beam delivery. By changing the angle of ion beam incidence relative to the substrate normal, the system achieves access to previously inaccessible surfaces such as vertical sidewalls, re-entrant features, and over-hanging structures, thereby improving doping accessibility while maintaining uniformity through controlled angular distribution
Solution Approach 2:
The patent employs dynamic substrate rotation during ion beam delivery. By rotating the substrate during the doping process, the system ensures that all surfaces including vertical and re-entrant features receive uniform ion exposure, transforming a static limitation into a dynamic solution that achieves both accessibility and uniformity
2Ease of operation
If angled ion beams are used to access complex surfaces, then surface accessibility improves, but the process complexity increases
Solution Approach 1:
The patent designs an ion beam delivery system that can operate in multiple modes: normal incidence for simple surfaces and oblique angles for complex surfaces. This multi-functional capability allows the same apparatus to handle both conventional and advanced three-dimensional device structures, reducing the need for specialized equipment while maintaining surface accessibility
3Ease of manufacture
If conventional processing techniques are used, then the process is straightforward, but three-dimensional device topology cannot be effectively processed
Solution Approach 1:
The patent modifies key process parameters including ion beam angle, substrate rotation speed, and beam energy to accommodate different three-dimensional topologies. By dynamically adjusting these parameters, the system maintains process simplicity while achieving adaptability to various device geometries including FinFETs, trench isolators, and three-dimensional transistors
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and uniform doping of three-dimensional structures by alternately directing angled ion beams and molecular beams to form monolayers, overcoming the limitations of conventional techniques and achieving targeted doping profiles on complex surface features.
Implementation Method 1
an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate
Implementation Method 2
a plasma chamber configured to generate a plasma
Implementation Method 3
a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate
Data Source
AI summary
In one embodiment, a processing apparatus may include a plasma chamber configured to generate a plasma; a process chamber adjacent the plasma chamber and configured to house a substrate that defines a substrate plane; an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate, the ion beam forming a non-zero angle with respect to a perpendicular to the substrate plane; and a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate, wherein the ion beam and molecular beam are alternately delivered to the substrate to form a monolayer comprising species from the ion beam and molecular beam.