Angled Ion Extraction Plate Assembly for Uniform Substrate Processing
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Solution Overview
Problem
Existing methods for generating angled ion beams in semiconductor processing suffer from non-uniform ion distribution due to varying substrate distances from the ion beam source, leading to process variations and limitations in current extraction.
Innovation Solution
A plasma processing apparatus with a plate assembly that includes a plate with apertures, allowing angled ion extraction, and an actuator to dither the plate and substrate relative to each other, combined with adjustable ion extraction duty cycles to maintain uniform ion delivery.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the platen is tilted to generate an angled ion beam, then the ion beam strikes the substrate at a non-zero angle, but various regions of the substrate are at different distances from the ion beam source causing process variations
Solution Approach 1:
The system dynamically adjusts the ion beam extraction angle by varying the shape of the plasma sheath in real-time, allowing the extraction angle to be changed without physically tilting the platen or substrate. This dynamic control maintains consistent distance between the ion beam source and all substrate regions while achieving the desired angled ion implantation.
Solution Approach 2:
The invention changes the electrical parameters of the plasma sheath (voltage, current distribution) to control its shape and thereby control the ion extraction angle. By adjusting the plasma sheath parameters rather than mechanical orientation, the system achieves angled ion beams while maintaining geometric consistency for uniform processing.
2Ease of operation
If the ion beam source is rotated to achieve the desired angle, then the ion beam strikes the substrate at a non-zero angle, but similar shortcomings occur with process variations
Solution Approach 1:
The invention replaces the mechanical rotation or tilting system with an electrical control system that shapes the plasma sheath. Instead of mechanically moving the ion beam source or substrate, the system uses electrical fields to control ion extraction geometry, eliminating the process variations caused by mechanical orientation changes.
3Ease of operation
If the plasma sheath shape is controlled to vary the extraction angle, then angled ion beams are achieved, but limitations exist in the amount of current that may be extracted
Solution Approach 1:
The system segments the plasma sheath control into multiple independently controllable regions, allowing different parts of the sheath to be shaped differently. This segmentation enables the system to maintain favorable sheath geometry for high current extraction in some regions while achieving the desired extraction angle in others, thereby increasing total extractable ion current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves uniform ion etching and deposition processes by compensating for non-uniform ion flux at turnaround points, ensuring consistent ion dose across the substrate.
Implementation Method 1
a chamber operable to contain a plasma within a chamber volume
Implementation Method 2
ions are extracted through the plurality of openings and delivered to the substrate at a non-zero angle
Data Source
AI summary
Disclosed herein are systems and methods for high throughput angled ion processing. In one approach, a processing apparatus may include a chamber operable to contain a plasma, the chamber defined by a plurality of sidewalls, and a plate assembly arranged along a side of the chamber. The plate assembly may include a plate defining a plurality of apertures, wherein ions are extracted through the plurality of apertures and delivered to a substrate at a non-zero angle relative to a perpendicular extending from the substrate. The processing apparatus may further include an actuator operable to dither the moveable plates and the substrate relative to one another as the ions are extracted through the plurality of apertures.