Electric Discharge Tubes TRIZ Cases

Alternating modifying, removal, and process gases create selective adsorption zones, enabling precise film formation only where processing is needed.

Interconnected groove electrodes in a ceramic plate improve chucking of glass, epoxy, and Si/glass while lowering breakdown risk and cost.

Plasma pretreatment activates SiGe layer surfaces before etching, raising lateral etch rate while preserving selectivity and limiting silicon loss.

A transparent dielectric dome and vertical parallel antennas limit infrared heating, stabilizing plasma and improving thin-film uniformity.

A translating and rotating magnetron evens target erosion in PVD chambers, improving film uniformity, target use, and co-sputtering flexibility.

Integrated dielectric plate positioning with the support unit improves plasma edge etching uniformity without adding bulky moving structures.

A movable cooling structure changes its distance from the wafer heater to widen process temperature range, improve uniformity, and cut maintenance time.

A thermoelectric cooling structure pre-cools the TEM sample holder to match the microscope environment, preventing drift and enabling immediate analysis.

A non-flat collimator filters angled target material in PVD, improving wafer deposition thickness uniformity for semiconductor layers.

Sequential plasma deposition and etch cycles smooth silicon microneedles and trenches while preserving 3D feature shape and function.

A thin dielectric between dissimilar work-function conductors harvests ambient thermal energy to provide autonomous power for embedded electronics.

Dithered angled ion extraction and duty-cycle control compensate for flux variation, keeping ion dose uniform across the substrate.

Perpendicular ion beam scanning and wafer reciprocation improve implantation uniformity and wafer coverage in semiconductor processing.

A bendable conductive tape enables direct ultramicrotome-to-EM transfer while dissipating charge for clearer tissue imaging.

Pitch relaxation shifts semiconductor cut features for single-mask printing, while angled ion implantation enlarges etch margins and reduces cost.

A sealed gas heat-transfer space and RF conduction member keep electrode spacing uniform while cooling the ceramic plate at lower cost.

Dual-waveform plasma control separates ion flux and ion energy, enabling low-temperature carbon hard mask deposition with high selectivity.

A dense sputtered yttrium oxide film cuts porosity and residual stress, helping plasma processing members resist cracking, peeling, and corrosion.

An angled, rotating APPJ nozzle redirects plasma off-axis to reduce turbulence and temperature variation during glass edge curing.

Different target segments use tailored zinc, indium, and gallium ratios to correct thin-film non-uniformity and improve display yield.

A gantry-guided CVD substrate lifter uses linkage centering, ceramic shafts, and cooling plates to prevent thermal deformation and alignment errors.

Laser-patterned trenches and bump structures plus low-kV FIB milling form an on-wafer APT specimen with higher mass resolution and stability.

Mirror-symmetrical annular coils balance electromagnetic fields to reduce plasma non-uniformity and improve etching consistency.

Opposed gas inflows create gas-to-gas collision and hydrolysis, cutting pipe clogging and water use in semiconductor exhaust cleaning.

Maps arc events to magnetron position in a PVD chamber, enabling in-situ plasma diagnosis without opening the chamber.

Alternating plasma deposition and etching fills high-aspect-ratio trenches with silicon oxide while reducing voids and improving process uniformity.

A mixed HF and phosphorus-containing plasma raises silicon-film etch rate while preserving mask integrity and pattern fidelity.

Redistributing excessive dose inside the target pattern helps multi-beam writing correct defective beam exposure and preserve pattern shape.

Individually adjustable magnet yokes reshape local magnetic fields during rotary sputtering to correct erosion-driven coating non-uniformity.

Through holes, grooves, and lift pins align insulating and conductive rings accurately, reducing replacement damage and preserving plasma uniformity.

A movable second ring reduces overlap with the heating zone, improving plasma uniformity and substrate processing reliability.

Timed reactant reduction during plasma etching balances multi-metal etch rates, preventing blocking layers while maintaining throughput.

Bonded alumina and aluminum nitride ceramic discs cut lid temperature gradients in ICP chambers, reducing cracking and speeding heating and cooling.

Raised-ring position sensing lets the controller detect transfer misalignment and correct placement to reduce damage in substrate processing.

Refractory metal sputtered from the etch chamber forms a hard mask passivation layer, improving selectivity for high-aspect-ratio etching.

Real-time plasma impedance feedback adjusts bias ramp voltage to stabilize ion trajectories and improve etching profile consistency.

Movable magnetrons and reactive sputtering create dense, uniform coatings that protect semiconductor components from plasma wear and chemical attack.

EBID forms a conformal contrast layer away from fragile patterned features, protecting topography and improving TEM visibility.

Mixed Co-Fe-B powders are sintered into coarse (CoFe)2B and (CoFe)B phases to cut sputtering particles while preserving magnetic film yield.

A load lock filled with protecting gas lets a TEM holder capsule seal air-sensitive samples without breaking vacuum integrity.

Adding hydrogen to GeF4 feed gas suppresses tungsten fluoride deposits, boosting Ge+ current and extending ion source life.

A shared foreline with baffles and pressure feedback equalizes chamber pressure and gas flow to improve deposition uniformity and throughput.

Low-oxygen Ag alloy composition and vacuum melting improve alloy uniformity, reduce arcing, and produce smooth adherent sputtered layers.

Atmospheric pressure plasma cleans and activates fastener and nutplate surfaces faster than abrading or wet chemistry, enabling stronger adhesive bonds.

Integrated glow and silent discharge chambers enable stable optical gas analysis from high vacuum to near atmospheric pressure with one sensor.

Laser absorption spectroscopy tracks radical species in real time, enabling closed-loop plasma tuning to reduce chamber drift and yield loss.

A tungsten plasma step coats recess sidewalls before final etching, reducing bending and preserving mask protection in silicon-containing films.

Remote plasma TiCl4 deposition boosts titanium selectivity on silicon over dielectrics, improving contact resistance and feature fill.

Adjustment grooves in the upper plate reshape the electric field to even plasma density and improve etching and annealing uniformity.

Varying extraction grid hole radii with a mirror function flattens angled broad ion beams and improves wafer flux uniformity.