Yttrium Oxide Coating for Low-Stress Plasma Processing Members
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Solution Overview
Problem
Existing plasma processing device components face issues with high residual stress leading to cracking or peeling, and existing methods to improve corrosion resistance, such as sol-gel and thermal spraying, result in porous films with microcracks or high porosity.
Innovation Solution
A member for a plasma processing device comprising a base material with a dense yttrium oxide film having a full width at half maximum of 0.25° or less and closed porosity of 0.2% or less, achieved through a sputtering process, ensuring low residual stress and improved corrosion resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a film is formed by sol-gel method to improve corrosion resistance, then the film can be deposited, but the full width at half maximum cannot be reduced below 0.3° and porosity remains high
Solution Approach 1:
The patent changes the deposition method from sol-gel to sputtering, which fundamentally alters the film formation parameters. This enables achieving a full width at half maximum of 0.25° or less and closed porosity of 0.2% or less, significantly improving both the precision parameter and corrosion resistance simultaneously
Solution Approach 2:
The patent replaces the chemical sol-gel process with a physical sputtering deposition process. This substitution allows for better control of film density and crystallinity, achieving the required full width at half maximum and porosity levels that were unattainable by sol-gel method
2Stress or pressure
If thermal spraying method is used to reduce residual stress, then stress is reduced, but open porosity and closed porosity become large and microcracks form
Solution Approach 1:
The patent replaces the thermal spraying process with sputtering deposition. This substitution eliminates the high-velocity particle impact mechanism that causes microcracks and porosity, while still achieving low residual stress through controlled film growth and stress management during sputtering
Solution Approach 2:
The patent changes the deposition parameters by using sputtering instead of thermal spraying. This enables achieving low residual stress without the harmful side effects of porosity and microcracks, as the sputtering process allows for more controlled and uniform film formation
3Reliability
If yttrium oxide film is formed to improve plasma resistance, then corrosion resistance improves, but large residual stress causes cracking and peeling
Solution Approach 1:
The patent changes the deposition method to sputtering, which enables precise control of film stress and structure. This achieves the required plasma resistance while maintaining film integrity and adhesion by controlling the full width at half maximum and closed porosity to minimize residual stress
Solution Approach 2:
The patent uses a composite structure with a base material and a yttrium oxide film layer. By optimizing the film deposition process through sputtering, the interface between the base material and film is improved, enhancing adhesion while maintaining the protective plasma resistance properties of the yttrium oxide layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The member provides enhanced corrosion resistance and reliability, reducing the risk of cracking and peeling, thereby improving the longevity and productivity of plasma processing devices.
Implementation Method 1
achieved through a sputtering process
Implementation Method 2
full width at half maximum of a diffraction peak on a (222) plane of yttrium oxide obtained by X-ray diffraction of the film
Data Source
AI summary
A member for use in a plasma processing device of the disclosure includes a base material and a film containing yttrium oxide as a main component on the base material. An area occupancy of closed pores of the film is 0.2 area % or less, and a full width at half maximum of a diffraction peak on a (222) plane of yttrium oxide obtained by X-ray diffraction of the film is 0.25° or less. A plasma processing device according to the disclosure includes the member for use in a plasma processing device.