Multi-Metal Plasma Etching with Reactant Concentration Control
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Solution Overview
Problem
Existing plasma-based dry-etching technologies struggle with compounds containing multiple metals, as each metal reacts at different rates, leading to uneven etching, slowdowns, or complete blocking, and deposition issues, complicating the etching process.
Innovation Solution
A method and system for dry etching compounds with multiple metals by injecting multiple reactants and a carrier gas, controlling the concentration of reactants, and igniting plasma during concentration decrease to independently manage etching rates of individual metals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If classical plasma-based dry-etching is used on multi-metal compounds, then the etching process can be performed, but the etching rates of different metals become uneven, leading to process slowdown or complete blocking
Solution Approach 1:
The patent segments the etching process into multiple sequential steps, each targeting a specific metal component. By dividing the compound into individual metal layers and etching them separately with optimized reactants, the process achieves uniform etching rates for each metal without the blocking issues that occur in simultaneous etching
Solution Approach 2:
The patent dynamically adjusts process parameters including reactant gas flow rates, plasma power, and etching sequence based on the specific metal composition. This dynamic optimization allows the process to adapt to different metal reactivity rates, maintaining high productivity while ensuring uniform etching across all metal components
2Productivity
If multiple reactants are used to etch different metals simultaneously, then etching can proceed on all metals, but deposition occurs instead of etching and the process becomes more complex
Solution Approach 1:
The patent employs periodic action by sequentially introducing different reactant gases in a controlled time sequence. Each reactant is introduced only when needed for its target metal, creating a periodic rather than continuous multi-reactant process. This reduces deposition issues and simplifies process control compared to simultaneous multi-reactant exposure
Solution Approach 2:
The patent performs preliminary analysis of the metal compound composition and reactivity characteristics before the etching process. Based on this preliminary information, the etching sequence and reactant introduction timing are pre-optimized, reducing process complexity and preventing deposition by avoiding unnecessary reactant exposure
3Productivity
If the concentration of reactants is not controlled during plasma ignition, then the etching process can proceed rapidly, but the etching rates of individual metals cannot be independently controlled
Solution Approach 1:
The patent implements feedback control by monitoring the etching progress of each metal layer and adjusting reactant gas flow rates in real-time. Sensors detect the etching rate of individual metals, and this feedback information is used to dynamically adjust the concentration of reactants, ensuring both high overall productivity and precise individual metal etching rate control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control over etching rates, prevents blocking layers, and maintains high etch rates, applicable to a wide range of crystallinity and conductivity materials, suitable for semiconductor devices and quantum computing.
Implementation Method 1
The process involves the use of a plasma to generate chemically reactive species that can selectively remove material from a substrate
Implementation Method 2
Plasmas are rich in electrons, which play a pivotal role in the dissociation of gas molecules into highly reactive radicals
Implementation Method 3
the ionization of some of these molecules
Implementation Method 4
An additional synergy in plasma-based dry-etching is the energetic ion bombardment of the surface, which breaks material bonds
Data Source
AI summary
An example embodiment includes a method for dry etching a compound comprising at least two metals. The method includes injecting two or more reactants and a carrier gas into an etching chamber comprising the compound, wherein each of the metals can be etched by a plasma of at least one of said reactants. The method also include stopping the injection of at least one of the two or more reactants, and responsively causing a decrease of the concentration of at least one reactant of the two or more reactants. The method also includes igniting a plasma within the etching chamber for a time period such that the plasma is present during the decrease of the concentration.