ICP Antenna Dome Layout for Stable Plasma Thin-Film Deposition
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Solution Overview
Problem
Existing plasma-enhanced chemical vapor deposition (PECVD) systems face issues with antenna heating due to infrared light, leading to plasma instability and non-uniform thin film deposition, and contamination of chamber components due to process gas flow and infrared reflection.
Innovation Solution
A substrate processing apparatus with a transparent dielectric upper and lower domes, vertically aligned strip-line antennas, and a gold-plated antenna housing that reflects and absorbs infrared light, combined with a resistive heater for uniform heating and plasma generation, along with controlled gas flow paths to prevent contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an antenna is disposed on an upper dome to generate plasma, then plasma generation is achieved, but the antenna is heated by infrared light causing plasma instability and non-uniform thin film deposition
Solution Approach 1:
A dielectric member is introduced as an intermediary component between the antenna and the upper dome. This dielectric member blocks infrared light from reaching the antenna while allowing plasma generation to proceed normally, thus resolving the contradiction between maintaining plasma stability and preventing antenna overheating
Solution Approach 2:
The invention utilizes the infrared light that would otherwise harm the antenna by converting it into useful substrate heating. The transparent upper dome allows infrared light to pass through and heat the substrate directly, while the dielectric member protects the antenna, thus converting the harmful infrared radiation into a beneficial heating source for uniform thin film deposition
2Manufacturing precision
If the inner wall is designed with quartz and domes are designed with quartz to prevent foreign substances, then contamination is reduced, but infrared light reflects off the antenna causing non-uniform thin film deposition
Solution Approach 1:
The dielectric member serves as an intermediary that selectively interacts with infrared light. It allows the quartz dome structure to maintain its contamination prevention function while blocking the harmful infrared reflection that would otherwise cause non-uniform thin film deposition on the substrate
Solution Approach 2:
The dielectric member is strategically positioned only where needed - between the antenna and the upper dome - to block infrared light. This localized application maintains the overall quartz structure's benefits for contamination prevention while addressing the specific problem of infrared reflection affecting thin film uniformity
3Manufacturing precision
If pressure is maintained at several mTorr to decrease foreign substances, then deposition quality improves, but process time increases due to vacuum maintenance requirements
Solution Approach 1:
The invention enables operation at higher pressures (reduced vacuum level) by stabilizing plasma generation through the dielectric member's protection of the antenna from infrared heating. This parameter change in operating pressure reduces vacuum maintenance time while maintaining deposition quality through improved plasma stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Stable plasma generation and uniform thin film deposition are achieved, reducing antenna heating and chamber contamination, while maintaining high process temperatures for semiconductor and solar cell manufacturing.
Implementation Method 1
an antenna disposed on the upper dome to generate inductively coupled plasma
Implementation Method 2
an upper dome covering an upper surface of the chamber and formed of a transparent dielectric material
Implementation Method 3
a resistive heater embedded in an antenna housing disposed to cover the antenna
Data Source
AI summary
A substrate processing apparatus includes a chamber having a sidewall; a susceptor mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a transparent dielectric material, and an antenna disposed on the upper dome to generate inductively coupled plasma. The antenna includes two one-turn unit antennas, the wo one-turn unit antennas each has an upper surface and a lower surface and are disposed to overlap each other on the upper surfaces and the lower surfaces of the two one-turn unit antennas, the two one-turn unit antennas are connected in parallel and are connected to a radio-frequency (RF) power supply, and a width direction of each of the one-turn unit antennas stands upright vertically.