Substrate Processing with Modified Layers for Selective Film Formation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing substrate processing methods lack the ability to control the progression and inhibition of processing on specific areas of a substrate effectively.

Innovation Solution

A method involving alternating steps of supplying a first modifying gas to form a modified layer, removing a portion of it with a first removal gas, and then selectively processing areas with a process gas and reactant gas, repeated a predetermined number of times, to control the processing on the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a film is formed on the substrate using a substance that inhibits adsorption, then the film formation is promoted, but the ability to control processing areas on the substrate is insufficient

Engineering Contradiction:
Improvefilm formation controlVSAvoidprocessing area control
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent applies local quality by creating modified layers with different properties in different areas of the substrate. The first modifying gas forms a first modified layer that inhibits adsorption in specific regions, while the second modifying gas forms a second modified layer with different inhibition characteristics in other regions. This allows the process gas to be selectively adsorbed in predetermined areas, achieving precise spatial control over film formation while maintaining the adsorption inhibition function where needed.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent segments the substrate surface into multiple functional zones by forming distinct first and second modified layers with different adsorption inhibition properties. The first modified layer covers certain areas to prevent unwanted adsorption, while the second modified layer covers other areas with different inhibition characteristics, allowing the process gas to be directed to specific regions. This segmentation enables independent control of processing in different substrate areas.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If modifying gas is supplied to form modified layer and then removed, then processing control is improved, but the process complexity increases

Engineering Contradiction:
Improveprocessing area controlVSAvoidprocess steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by forming the first modified layer before supplying the process gas, which pre-determines the areas where adsorption will be inhibited. The first modifying gas is supplied in advance to create the initial spatial pattern of inhibition, and then the second modifying gas is supplied to refine or modify this pattern. This preliminary structuring of the substrate surface allows for precise control of subsequent film formation without requiring complex real-time adjustments during the main processing step.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows precise control over where processing occurs and inhibits it where necessary, enhancing the formation of desired films on the substrate.

Implementation Method 1

supplying a first modifying gas to the substrate to form a first modified layer on at least a portion of the substrate

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

supplying a first removal gas to the substrate to remove a portion of the first modified layer from the substrate

Methodology Applied
Scientific EffectDesorption: Desorption

Implementation Method 3

supplying a process gas to the substrate to preferentially process an area where the first modified layer is not formed over an area where the first modified layer is present

Methodology Applied
Scientific EffectSelective adsorption: Adsorption

Data Source

PatentUS20250293022A1Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Publication Date: 2025.09.18 KOKUSAI DENKI KK
  • US20250293022A1 patent drawing
  • US20250293022A1 patent drawing
  • US20250293022A1 patent drawing

AI summary

There is provided a technique that includes: performing a first step and a second step a predetermined number of times, wherein the first step includes performing a predetermined number of times: (a1) supplying a first modifying gas to the substrate to form a first modified layer on at least a portion of the substrate; and (a2) supplying a first removal gas to the substrate to remove a portion of the first modified layer from the substrate, and wherein the second step includes performing, after the first step, a predetermined number of times: (b1) supplying a process gas to the substrate to preferentially process an area where the first modified layer is not formed over an area where the first modified layer is present; and (b2) supplying a reactant gas to the substrate.