Angled Sidewall Deposition Chamber for TCO Yield
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Solution Overview
Problem
Existing methods for depositing transparent conductive oxide (TCO) materials in reactive plasma deposition processes result in inefficient use of source material due to ions and neutrals colliding with the sidewalls of the deposition chamber instead of the substrate, leading to reduced yield and uniformity, and increased costs in producing thin film products like solar panels.
Innovation Solution
The design of a substrate processing system with angled sidewalls that redirect ionized source material away from the chamber walls and towards the substrate, combined with a substrate carrier that can transform from a flat to a domed shape to ensure uniform deposition across the substrate, enhancing the probability of source material collision with the substrate and improving deposition rates and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If conventional vertical sidewalls are used in the deposition chamber, then the chamber structure is simple, but source material is lost to sidewall deposition reducing yield
Solution Approach 1:
The deposition chamber employs asymmetric sidewall angles where the first sidewall has a different angle than the second sidewall. This asymmetric configuration optimizes the trajectory of ionized source material, directing it preferentially toward the substrate while minimizing deposition on sidewalls, thereby reducing material loss and improving yield.
Solution Approach 2:
The invention introduces angular dimensionality to the sidewall configuration by specifying precise angle ranges (first sidewall: 80-90 degrees, second sidewall: 45-80 degrees). This dimensional approach to chamber geometry creates optimized material transport pathways in three-dimensional space, directing flux toward the substrate and away from sidewalls.
2Manufacturing precision
If substrate carrier remains flat, then the structure is simple, but deposition uniformity across the substrate is poor
Solution Approach 1:
The substrate carrier is designed with movable, adjustable panels that can dynamically change their angular orientation during the deposition process. This dynamic capability allows the carrier to adapt its geometry to optimize deposition uniformity across the substrate surface, with each panel independently adjustable to compensate for variations in material flux distribution.
Solution Approach 2:
The substrate carrier is divided into multiple separate panels rather than being a single rigid structure. This segmentation allows independent adjustment of each panel's angle and position, enabling precise control over substrate orientation to achieve uniform deposition across the entire substrate surface by compensating for angular variations in material arrival.
3Productivity
If deposition rate is increased, then productivity improves, but sidewall deposition increases reducing material efficiency
Solution Approach 1:
The asymmetric sidewall angles create preferential pathways for high-rate deposition onto the substrate while naturally shielding the sidewalls from excessive material flux. The first sidewall angle (80-90 degrees) and second sidewall angle (45-80 degrees) work together to direct high-velocity ionized material toward the substrate, enabling high deposition rates with reduced sidewall contamination and improved material efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the yield of source material deposited on the substrate, reduces unwanted sidewall deposition, and allows for higher deposition rates and improved uniformity, thereby reducing production costs and increasing the efficiency of TCO layer deposition in solar cells and other applications.
Implementation Method 1
a plasma gun generates a plasma beam that is guided toward a source via an electric magnetic field. The bombardment of the source with the plasma beam results in the source reaching its sublimation temperature.
Implementation Method 2
As a result the source material becomes vaporized and ionized before being deposited on the surface of a substrate within the chamber.
Implementation Method 3
one or more magnets operatively arranged to generate a magnetic field that guides the plasma beam to the source material holder
Implementation Method 4
the source material becomes vaporized and ionized before being deposited on the surface of a substrate within the chamber
Data Source
AI summary
A substrate processing system that includes a substrate processing chamber having one or more sidewalls that at least partially define a substrate processing region and extend away from a bottom wall of the substrate processing chamber at an obtuse angle; a source material holder configured to hold a source material within the substrate processing region; a plasma gun operatively coupled to introduce a plasma beam into the substrate processing region; one or more magnets operatively arranged to generate a magnetic field that guides the plasma beam to the source material holder; and a substrate carrier configured to hold one or more substrates within the substrate processing region.