Electric Discharge Tubes TRIZ Cases

Alternating RF power deposits protective polymers on SiC films, maintaining selectivity while achieving high etching rates for Low-k materials.

A segmented microwave plasma source deposits nanocrystalline diamond at 100-500°C, reducing thermal stress on complex substrates.

A flexible woven plasma electrode module generates atmospheric discharge using ambient air without external gas supplies.

A micromanipulator stacks multiple TEM samples simultaneously to accelerate sample preparation workflows.

Segmenting the electrostatic chuck into overlapping layers prevents plasma-induced wear and arcing on the substrate mounting table.

Dynamic electron emission control suppresses substrate potential fluctuations and prevents electrostatic damage during ion beam etching.

Asymmetric pin spacing and angles minimize crosstalk and loss, ensuring signal integrity for high-frequency data transmission.

A plasma etching chamber uses a biased metallic structure to sputter material onto interior surfaces.

Fluid pressure replaces springs to ensure uniform antenna loading, preventing thermal deformation gaps and stabilizing microwave propagation.

A hybrid ion implantation scanner combines electric and magnetic fields to control beam trajectories across varying energy levels.

A processing gas distribution unit adjusts discharge positions via a movable partition wall to control gas flow across semiconductor wafers.

A plasma processing apparatus generates a multi-frequency carrier wave group to excite ionized gas within a processing vessel.

An electron beam system combines secondary-electron imaging with induced current detection to capture wafer structural data.

Remote plasma fluorine etching trims silicon oxide without deforming delicate structures by eliminating solid by-products through water vapor reactions.

A plasma filter assembly uses displaceable stencil filters to adjust flow passages and control particle concentration.

Switching between high-current and low-energy configurations via a unified beam center trajectory reduces the need for separate apparatuses.

A self-limiting lateral atomic layer etch process uses alternating oxidation and fluorine exposure to achieve precise semiconductor substrate processing.

Angled sidewalls redirect ionized source material toward the substrate to increase deposition yield.

Segmented electrode layers with varying resistance optimize high-frequency current distribution, resolving plasma density uniformity limits.

SF6/O2 gas removes polymer by-products while the yttrium oxide coated ceramic dome prevents particle generation from coating degradation.

A nested insulated connector keeps conductors enclosed within molded insulation to enable safe disconnection using an insulated hot stick.

Relocating the current sensor to the accessible bushing receiving section resolves deep tank maintenance complexity while maintaining dielectric strength.

A cam actuated filament clamp secures ion source leads via a rotating cam member and follower mechanism.

A rotary shutter apparatus with separating portions forms an indirect path to block sputtered particles between target electrodes.

An electron beam irradiation apparatus corrects positional deviations using calculated charge distributions.

Arc evaporation source uses magnetic field to guide ions toward substrate, reducing macro particle formation and compressive stress in coating films.

Nested segmented Compton cameras boost gamma ray detection frequency, accelerating image acquisition and reducing motion artifacts in medical imaging.

Contact-based distance measurement resolves positioning reproducibility issues in particle beam devices, enabling accurate gas feeding device alignment.

A plasma pretreatment roller modifies substrate surfaces to enhance vapor deposition film adhesiveness and homogeneity.

A charged particle beam treatment apparatus uses series semiconductors to adjust electromagnet current and control beam path length.

Localized inert gas confinement enables precise hole formation through sublimation, eliminating visible burn marks caused by oxidation.

A gas introducing unit positions flat ejection holes behind a dielectric window to shield the openings from direct plasma exposure.

A fluidly isolated adapter channels multiple precursors to a mixing manifold for uniform distribution.

A substrate cleaning apparatus uses electrostatic stress to detach foreign materials from the wafer bottom surface.

Composite amorphous carbon gate insulators reduce trap levels and membrane stress, ensuring stable switching operations in nitride semiconductor HEMTs.

Segmented rotatable and counterbalance magnet modules sweep across large substrates to improve film uniformity and step coverage beyond 200 mm.

Fusing successive powdered glass layers over a metal substrate creates an embedded electrode structure that withstands high electric fields without breakdown.

A rotatable substrate holder assembly enables concurrent ion implantation and wafer loading.

A retarding electrode repels positive ions generated by beam collisions with the current limiting aperture.

Single detector sequentially measures energy bands to form depth-resolved SEM images without enlarging the apparatus.

A rotary-translating stage uses magnetic levitation to stabilize substrates during high-speed scanning operations.

A trained machine learning model merges real-time sensor data into a latent plasma state representation to adjust reactor control parameters.

Tapering the refrigerant flow channel cross-section from upstream to downstream improves wafer cooling uniformity and soaking performance.

Hydrogen radicals generated via inert gas plasma selectively etch photoresist and damaged silicon, preventing underlying material damage and oxidation.

Concentric gas injection zones deliver independent flow rates to radial wafer regions, enabling precise control over polymer deposition and etch species distribution.

Segmented plasma chamber clamps isolate the substrate edge via an alumina inner member, reducing erosion and extending mean time between cleans.

A plasma treatment apparatus moves a substrate holder to expand exhaust conductance and spread active species across the vacuum chamber interior.

A carbon-containing FePt sputtering target enables stable deposition of magnetic recording films through controlled graphite orientation.

Oxygen plasma modifies the top surface of a recess to reduce loading effects and achieve uniform etching.