Hydrogen Radical Generation for Semiconductor Surface Processing
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Solution Overview
Problem
In semiconductor processing, the shrinking dimensions of devices pose challenges in maintaining surface properties and interface integrity, requiring effective methods for removing photoresist and damaged silicon layers without causing underlying material damage or oxidation.
Innovation Solution
Generating hydrogen radicals in a plasma chamber using an inert gas and mixing them with hydrogen gas to create neutral radicals, which are then exposed to the workpiece for processes like photoresist removal, silicon etching, and surface smoothing, utilizing a separation grid to filter ions and control radical distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma processing methods are used to remove photoresist and damaged silicon layers, then processing capability is maintained, but underlying material damage and oxidation occur
Solution Approach 1:
The patent changes the chemical composition parameters of the plasma by introducing hydrogen-containing gases (H2, D2, HD, BH3, AlH3, GaH3, InH3) to generate hydrogen radicals. These hydrogen radicals selectively react with photoresist and damaged silicon layers through chemical etching, removing them without damaging the underlying intact material, thus resolving the contradiction between processing capability and material protection
Solution Approach 2:
The patent uses an inert or reduced oxygen environment in the plasma chamber to prevent oxidation of the underlying material during processing. By controlling the plasma chemistry to be hydrogen-dominated rather than oxygen-containing, the method creates a protective atmosphere that eliminates oxidation harm while maintaining effective photoresist removal capability
2Productivity
If device dimensions are shrunk to advance semiconductor nodes, then device performance is improved, but surface properties and interface integrity become increasingly difficult to maintain
Solution Approach 1:
The patent employs hydrogen radicals generated from hydrogen-containing plasma to selectively remove photoresist and damaged silicon layers at the nanoscale. This chemical etching process maintains precise surface profiles and interface integrity even at advanced device nodes, enabling continued scaling while preserving surface properties through controlled radical reactions rather than conventional plasma etching
Solution Approach 2:
The patent replaces conventional mechanical/physical plasma etching methods with a chemical radical-based etching mechanism. Hydrogen radicals chemically react with and remove photoresist and damaged silicon through selective chemical bonds breaking, providing superior surface integrity and interface quality compared to traditional physical sputtering or etching methods at advanced device dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively removes photoresist and damaged silicon layers at low and high temperatures, respectively, while minimizing material damage and oxidation, enhancing semiconductor fabrication processes by improving surface integrity and material properties.
Implementation Method 1
generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source
Implementation Method 2
mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals
Data Source
AI summary
Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.