Electron Beam Irradiation Apparatus Charging Correction
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Solution Overview
Problem
Conventional electron beam writing techniques face challenges in achieving high dimensional accuracy due to positional deviations caused by charging phenomena, especially in miniaturized semiconductor manufacturing, where the use of charge dissipation layers is costly and inefficient.
Innovation Solution
An electron beam irradiation method that calculates charge amount distribution based on pattern complexity, calculates positional deviations, and corrects the irradiation position accordingly, using a system with a charge amount distribution calculation circuit, positional deviation calculation circuit, and correction circuit to improve charging effect correction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a charge dissipation layer is formed on the substrate to prevent charging, then charging effect is reduced, but manufacturing cost increases and affinity with chemically amplified resist deteriorates
Solution Approach 1:
The patent extracts and removes the charge dissipation layer from the substrate structure, replacing it with a computational charging effect correction method that calculates and compensates for charging deviations in the electron beam writing process without requiring additional physical layers
Solution Approach 2:
The patent replaces the physical/chemical mechanism of charge dissipation layers with a computational/mathematical mechanism that calculates charge distribution and corrects beam irradiation positions through software-based charging effect correction
2Manufacturing precision
If conventional charging effect correction methods are used, then some correction is achieved, but correction accuracy is insufficient for high dimensional accuracy requirements
Solution Approach 1:
The patent implements feedback by calculating the actual charge distribution based on pattern data and using this information to dynamically correct beam irradiation positions in real-time during the electron beam writing process
Solution Approach 2:
The patent performs preliminary calculation of charge distribution and determines correction amounts before actual beam irradiation, allowing pre-computation of charging effects and advance adjustment of irradiation positions to compensate for expected charging deviations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the accuracy of charging effect correction, allowing for precise electron beam application, reducing manufacturing costs, and addressing the limitations of charge dissipation layers.
Implementation Method 1
When a target object such as a mask is irradiated with electron beams, the irradiated position and its peripheral region may have been charged with the electron beams previously irradiated
Data Source
AI summary
An electron beam irradiation method includes calculating a charge amount distribution in the case where a substrate is irradiated with an electron beam, by using an index indicating complexity of a pattern to be formed on the substrate, calculating a positional deviation amount of an irradiation pattern to be formed due to irradiation with the electron beam, by using the charge amount distribution having been calculated, correcting an irradiation position by using the positional deviation amount having been calculated, and applying an electron beam to the irradiation position having been corrected.