Charged Particle Beam Path Length Control via Semiconductor Resistance
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Solution Overview
Problem
Current charged particle beam treatment apparatuses require significant time to switch between layers during treatment, increasing the burden on patients and inefficiencies in the treatment process.
Innovation Solution
The apparatus includes an energy adjusting portion and semiconductors connected in series between the electromagnet power source and electromagnet, allowing the control portion to reduce the charged particle beam energy and increase resistance, thereby shortening the path length and reducing switching time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If the charged particle beam energy is reduced by controlling the energy adjusting portion, then the path length is shortened and layer switching time is reduced, but the electromagnet current must be reduced which increases switching time
Solution Approach 1:
A semiconductor element is introduced as an intermediary component between the electromagnet power source and the electromagnet. This semiconductor acts as a controlled resistance that can be rapidly adjusted to manage the electromagnet current decay, enabling fast layer switching without being constrained by the natural slow decay of electromagnet current
Solution Approach 2:
The resistance value of the semiconductor element is dynamically changed during operation. When layer switching is required, the control portion increases the semiconductor resistance to rapidly reduce electromagnet current, enabling fast current adjustment without affecting the accelerator operation
2Loss of time
If semiconductors are connected in series between the electromagnet power source and electromagnet, then the electromagnet current can be rapidly reduced, but the device complexity increases
Solution Approach 1:
The semiconductor element's resistance parameter is dynamically adjusted based on operational requirements. During normal irradiation, the semiconductor maintains low resistance for efficient current flow. During layer switching, the resistance is increased to rapidly decay the electromagnet current, providing dual functionality without additional components
Solution Approach 2:
The semiconductor element serves multiple functions: it acts as a current control mechanism during irradiation and as a rapid current decay mechanism during layer switching. This multi-functionality is achieved by dynamically changing its resistance parameter, eliminating the need for separate components for each function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the time required to switch between layers, from approximately 2 seconds to 100 milliseconds, thereby decreasing the overall treatment time and improving efficiency.
Implementation Method 1
increases a resistance of semiconductors connected between the electromagnet power source and the electromagnet in series
Implementation Method 2
an electromagnet which is provided in the irradiation portion or the transport line
Implementation Method 3
an accelerator configured to emit a charged particle beam by accelerating charged particles
Data Source
AI summary
A charged particle beam treatment apparatus includes: an accelerator configured to emit a charged particle beam by accelerating charged particles; an irradiation portion configured to irradiate an irradiation object with the charged particle beam through a scanning method; a transport line configured to transport the charged particle beam emitted from the accelerator to the irradiation portion; an energy adjusting portion configured to adjust energy of the charged particle beam; an electromagnet which is provided in the irradiation portion or the transport line; an electromagnet power source which is connected to the electromagnet; and a control portion. Semiconductors are connected between the electromagnet power source and the electromagnet in series. When switching a layer of the irradiation object to be irradiated with the charged particle beam, the control portion reduces the energy of the charged particle beam by controlling the energy adjusting portion and increases a resistance of the semiconductors.