Ion Implantation Apparatus with Switchable Beamline Trajectory
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Solution Overview
Problem
Ion implantation apparatuses are limited by category-specific configurations, making them incompatible for different ion implantation processes, requiring multiple apparatuses for varying conditions, which increases costs and reduces productivity due to the need for multiple machines and difficulty in process compatibility.
Innovation Solution
An ion implantation apparatus and method that can operate as both high-current and medium-current, with a beamline device capable of switching between low energy/high current and high energy/low current settings, using a shared beam center trajectory and mechanical scanning to accommodate a wide range of implantation conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation apparatuses are classified into different categories with category-specific configurations, then each apparatus can be optimized for its specific ion implantation process, but multiple apparatuses are required for varying implantation conditions, increasing costs and reducing productivity
Solution Approach 1:
The beamline device is designed to support multiple implantation settings (high-current/low-energy and medium-current/high-energy) within a single apparatus, enabling it to perform different ion implantation processes that previously required separate dedicated apparatuses. This multi-functionality resolves the contradiction by allowing one apparatus to handle varying implantation conditions while maintaining process optimization.
Solution Approach 2:
The beamline device incorporates switchable configurations that allow dynamic adjustment between different implantation settings. The ability to switch between high-current/low-energy and medium-current/high-energy modes enables the apparatus to adapt to different process requirements, eliminating the need for multiple fixed-configuring apparatuses and thereby improving productivity without sacrificing manufacturing precision.
2Manufacturing precision
If multiple ion implantation apparatuses are owned for different implantation processes, then each process can be performed with optimized equipment, but the device complexity and cost increase
Solution Approach 1:
The beamline device is designed to support multiple implantation settings (high-current/low-energy and medium-current/high-energy) within a single apparatus, enabling it to perform different ion implantation processes that previously required separate dedicated apparatuses. This multi-functionality resolves the contradiction by allowing one apparatus to handle varying implantation conditions while maintaining process optimization.
3Reliability
If category-specific apparatus configurations are used, then each apparatus is optimized for its category, but apparatuses of different categories have no compatibility and require separate ownership
Solution Approach 1:
The beamline device incorporates switchable configurations that allow dynamic adjustment between different implantation settings. The ability to switch between high-current/low-energy and medium-current/high-energy modes enables the apparatus to adapt to different process requirements, eliminating the need for multiple fixed-configuring apparatuses and thereby improving productivity without sacrificing manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables a single apparatus to handle a broad range of energy and dose conditions, improving productivity by reducing the need for multiple machines and facilitating process compatibility, thus enhancing manufacturing efficiency and reducing costs.
Implementation Method 1
an ion source for generating ions and extracting the ions as an ion beam
Implementation Method 2
a beamline device for providing a beamline to transport the ion beam from the ion source to the implantation processing chamber
Implementation Method 3
an implantation processing chamber for implanting the ions into a workpiece
Data Source
AI summary
An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.