Annular Semiconductor Fin Fabrication via Self-Aligned Etching
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Solution Overview
Problem
Current photolithographic processes face limitations in achieving finer patterns and higher integration densities for semiconductor device structures, as they struggle to maintain resolution and precision with shrinking pitch sizes and critical dimensions.
Innovation Solution
A method involving the formation of an annular semiconductor fin through a ring structure over a substrate, with subsequent etching, spacer formation, and gate structure creation, allowing for precise control over source/drain regions and gate structures, enabling the fabrication of advanced semiconductor devices with improved resolution and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithographic processes are used to fabricate semiconductor features, then conventional manufacturing methods can be applied, but resolution and integration density cannot be further improved due to limitations in exposure apparatus
Solution Approach 1:
The patent transitions from planar photolithographic patterning to three-dimensional self-aligned patterning using sacrificial pillars and conformal film deposition. The ring structures and spacers are formed through vertical dimension exploitation, enabling sub-lithographic feature sizes without requiring higher resolution exposure apparatus.
Solution Approach 2:
The sacrificial pillars and conformal spacer structures enable self-aligned patterning where the ring structures automatically define the positions of subsequent features. This self-alignment mechanism eliminates the need for complex multi-step lithographic alignment procedures, achieving finer effective patterning resolution through geometric self-constraint rather than optical precision.
2Quantity of substance
If photolithographic processes are used to fabricate semiconductor features, then existing manufacturing capabilities can be maintained, but integration density cannot be increased due to pitch size limitations
Solution Approach 1:
The methodology exploits the vertical dimension through conformal film deposition on three-dimensional structures (pillars, rings, spacers) to define horizontal feature positions. This allows integration density to be determined by vertical film thickness control rather than horizontal lithographic pitch, effectively decoupling integration density from exposure apparatus resolution limits.
Solution Approach 2:
Sacrificial pillars are formed in advance to pre-defide the positions of ring structures and subsequent features. This preliminary structuring enables the conformal spacer deposition to automatically establish precise pitch dimensions without requiring high-resolution lithographic patterning, thereby increasing integration density through pre-planned geometric constraints.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the resolution and integration density of semiconductor devices by forming annular semiconductor fins and precise gate structures, overcoming the limitations of traditional photolithographic processes and enabling more efficient semiconductor device fabrication.
Implementation Method 1
performing an etching process to form an annular semiconductor fin under the ring structure
Implementation Method 2
forming a processed area on a top portion of the substrate exposed by the annular semiconductor fin
Data Source
AI summary
The present application discloses a method for preparing a semiconductor device structure. The method includes: forming a ring structure over a substrate; performing an etching process to form an annular semiconductor fin under the ring structure; forming a processed area on a top portion of the substrate exposed by the annular semiconductor fin; selectively forming a spacer on a side surface of the annular semiconductor fin; forming a lower source/drain region on the surface of the substrate in contact with a bottom portion of the annular semiconductor fin; forming an inner gate structure in contact with an inner sidewall of the annular semiconductor fin and forming an outer gate structure in contact with an outer sidewall of the annular semiconductor fin; and forming an upper source/drain region on an upper portion of the annular semiconductor fin.