Annular Resonant Plasma Source for In-Situ Chamber Cleaning
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Solution Overview
Problem
Unwanted material buildup inside semiconductor process chambers during deposition and etching processes can alter performance and require costly chamber dismantling for cleaning, affecting yield and efficiency.
Innovation Solution
The development of an azimuthal plasma source using an annular exciter and applicator configuration, which wirelessly generates plasma to clean the chamber and control deposition thicknesses without dismantling, utilizing RF power and high K dielectric materials to form a resonant circuit for inductive excitation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If traditional cleaning methods are used to remove unwanted material buildup, then cleaning effectiveness is improved, but chamber dismantling and component replacement are required, increasing device complexity and cost
Solution Approach 1:
The patent replaces mechanical cleaning methods (which require chamber dismantling) with an electromagnetic plasma-based cleaning system. The annular applicator generates plasma that chemically reacts with and removes unwanted deposits without physical contact, eliminating the need to dismantle the chamber or replace components.
Solution Approach 2:
The patent introduces plasma as an intermediary substance between the cleaning system and the unwanted material buildup. The plasma, generated by the annular applicator, acts as a reactive medium that selectively removes deposits while leaving the chamber intact, serving as a mediator that enables cleaning without mechanical intervention.
2Object-affected harmful factors
If process chambers are cleaned by dismantling, then cleaning thoroughness is improved, but productivity and yield are reduced due to downtime
Solution Approach 1:
The patent replaces mechanical disassembly-based cleaning with plasma chemical cleaning, allowing the chamber to remain assembled and operational. The plasma cleaning process can be performed in-situ without stopping production, maintaining productivity while achieving effective cleaning.
Solution Approach 2:
The patent enables continuous cleaning action through plasma generation that can operate during or between production cycles without requiring chamber shutdown or disassembly. The annular applicator maintains plasma generation continuously, ensuring uninterrupted cleaning capability that preserves production continuity.
3Reliability
If expensive process kit components are replaced to maintain performance, then performance is restored, but costs increase
Solution Approach 1:
The patent converts the harmful effect of plasma (which can be aggressive and damaging) into a beneficial cleaning mechanism by carefully controlling its generation through the annular applicator. The plasma is directed specifically at unwanted deposits, removing them while protecting the expensive process kit components from damage, thus preserving them rather than requiring replacement.
Solution Approach 2:
The patent enables the process chamber to clean itself through in-situ plasma generation. The annular applicator creates plasma that automatically reacts with and removes deposits from chamber surfaces, eliminating the need for external cleaning interventions or component replacement, allowing the system to maintain itself autonomously.
4Manufacturing precision
If uniform plasma distribution is used, then deposition uniformity is improved, but control over edge deposition thickness is reduced
Solution Approach 1:
The patent applies local quality by designing the annular applicator to generate non-uniform plasma distribution with higher density at the edges and lower density toward the center. This localized plasma concentration enables independent control of edge deposition thickness while maintaining overall deposition uniformity, allowing tailored processing for different regions of the substrate.
Solution Approach 2:
The patent utilizes parameter changes by adjusting plasma generation parameters (such as RF power, gas flow rates, and applicator geometry) to control the spatial distribution of plasma density. By varying these parameters, the system can optimize plasma concentration at specific locations, enabling precise control over deposition thickness profiles including enhanced edge control while maintaining center uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables effective cleaning of process chambers and precise control over deposition processes, increasing yield and reducing costs by generating localized plasma for cleaning and modulating plasma sheaths, while allowing for optimal placement and retrofitting without external power leads.
Implementation Method 1
an annular exciter, physically separated from the annular applicator, formed of a first conductive material with at least one angular split with an angle forming an upper overlap portion and a lower overlap portion separated by a high K dielectric material which is configured to provide capacitance in conjunction with an inductance of the annular applicator to form a resonant circuit that is configured to resonate when the annular exciter flows RF current that inductively excites the annular applicator
Implementation Method 2
configured to provide capacitance in conjunction with an inductance of the annular applicator to form a resonant circuit that is configured to resonate when the annular exciter flows RF current
Data Source
AI summary
Methods and apparatus for forming plasma in a process chamber use an annular exciter formed of a first conductive material with a first end electrically connected to an RF power source that provides RF current and a second end connected to a ground and an annular applicator, physically separated from the annular exciter, formed of a second conductive material with at least one angular split with an angle forming an upper overlap portion and a lower overlap portion separated by a high K dielectric material which is configured to provide capacitance in conjunction with an inductance of the annular applicator to form a resonant circuit that is configured to resonate when the annular exciter flows RF current that inductively excites the annular applicator to a resonant frequency which forms azimuthal plasma from the annular applicator.