Electric Discharge Tubes TRIZ Cases

Off-beam current sensing on the aperture plate enables real-time exposure time correction for more consistent E-beam mask patterning.

Offset third electrodes discharge charged particles on the chuck surface, reducing wafer misalignment during release and delivery.

Filtered reflected-wave monitoring lets multiple RF plasma sources suppress frequency interference and keep substrate processing stable.

Time-variant power measurements at two matching-circuit locations reveal plasma ignition state more reliably while protecting the RF generator.

Keeping the wafer still during gas dosing, then rotating it by a set angle between cycles, improves film thickness uniformity across the substrate.

Separate rotating magnet units confine low-pressure plasma for stable copper film coverage while removing target center re-deposition.

A dense Mn-Ta-W-Cu-O target with Mn4Ta2O9 suppresses abnormal discharge in DC sputtering, enabling stable recording-film deposition.

A shared lifter pin transfers edge and cover rings through aligned holes, simplifying ring exchange and saving space in plasma tools.

A tubular and footed confinement ring controls radical exhaust near the wafer edge to reduce back diffusion and improve etch uniformity.

A bundled drift-tube layout with Vernier cathodes enables precise 3D muon tracking in confined boreholes for radiography and geotomography.

A split coolant path with a narrower outer channel improves temperature control at the wafer edge while maintaining overall heat removal.

A shroud discharge slit layout boosts edge-region etching rate and improves uniformity for high-stack V-NAND substrate processing.

Multiple X-ray sources and joined detectors enable DR and CT imaging in one therapy platform, improving targeting while reducing patient repositioning.

Ion implantation tunes a backside stress compensation film to counter wafer in-plane distortion and improve flatness in downstream fabrication.

Synchronized low- and high-frequency RF pulsing balances sidewall passivation and mask selectivity while reducing nitride bow formation.

A downstream cleaning gas inlet in the pumping liner targets exhaust-side residue buildup, improving chamber cleaning while reducing gas use and downtime.

A conductance-based model converts exit-path pressure readings into chamber and substrate pressure estimates for tighter process control.

Microwave plasma densifies spin-on dielectric near CFET contacts at low temperature, avoiding anneal damage to metal gate structures.

Non-contact heating and coil position control raise radical concentration for more efficient semiconductor substrate processing.

A conical stationary-to-rotating contact boosts current transfer in rotary sputtering cathodes while reducing carbon wear, sealing damage, and heat buildup.

A silver-zinc-antimony reflective layer preserves display reflectivity while improving chemical, heat, and weather resistance.

A two-piece bush with a protruding interlock cuts bush-to-puck tolerance, blocks plasma ingress, and reduces particle generation.

Camera-based plasma imaging detects chamber drift during processing, enabling real-time wafer uniformity control without ex situ metrology.

Beam-guided process gas repair uses control-bandwidth-based shape planning to correct photomask defects with sharper, more precise edges.

Grouped ON/OFF timing lowers instantaneous beam current in multiple-beam writing, reducing Coulomb-induced position errors without extra data transfer.

Annular protrusions and recesses create a labyrinth path that blocks sputtered reactants from ring contact parts, reducing adhesion and wafer transfer failure.

Separate gas control for electrically linked hollow cathode tubes extends plasma source life and raises power without excess cathode emission.

A sector-shaped SEM detector captures asymmetric secondary electrons while reducing area, leakage current, capacitance, and shield assembly steps.

Back-side illumination and telecentric imaging build a 3D sample map that speeds microscope positioning and helps avoid alignment errors or collisions.

Position-independent cross-talk correction in detector arrays improves charged-particle signal accuracy and image quality at high throughput.

Brightness-entropy second-derivative analysis of SEM images improves focused ion beam delayer end point detection at layer transitions.

State-dependent frequency and impedance matching cuts IMD-driven reflected wave power between pulsed ON and OFF periods.

An ICP chamber with embedded dual-zone pedestal heating and rotation deposits uniform carbon films at lower temperatures with less device damage.

A two-member stage combines low weight with high heat conduction and low thermal expansion to improve chuck cooling and reduce cracking risk.

Continuous in-chamber resist slimming and oxide deposition cut contamination risk, cost, and pattern width variation in fine mask forming.

Top-side purge gas inlet and bottom-side exhaust create uniform chamber flow, limiting gas retention and particle buildup during substrate transfer.

A deflection unit redirects ion or electron beams onto one optical axis, enabling multi-beam imaging and processing without losing focus quality.

A longer hydrogen-plasma step before nitrogen-hydrogen plasma improves nitride film purity while minimizing residual stress after cooling.

A split frame and rigid supports isolate power-connection forces from the source, preserving charged particle beam alignment during handling.

Organosilicon precursor dosing after ALD raises wafer hydrophobicity, improving photoresist adhesion and reducing mask collapse or lift-off.

Real-time RF waveform capture over EtherCAT enables plasma emission monitoring and immediate RF plate power adjustment in PEALD.

Alternating gas channels and equal-length feed paths balance CVD and ALD gas flow to improve film thickness uniformity across substrates.

Rapid showerhead temperature adjustment using heat-control and gas-distribution layers helps prevent etch clogging and critical dimension bowing.

High-density nitrogen plasma forms diffusion barrier layers in high-k MIM capacitors to suppress leakage and preserve capacitance.

Measured fluorine radical levels guide remote plasma and chamber settings to cut gas waste, recombination loss, and equipment wear.

Embedded electrode plates in a dielectric grid stabilize ion beam extraction while lowering dielectric breakdown and electrode fracture risk.

Ramped bias pulse frequency separates deposition from etching, controlling ion energy to reduce recesses, necking, and material loss.

External actuators and arm-guided RF cable routing let the sample stage move vertically without enlarging the vacuum vessel or destabilizing plasma.

A charged particle mirror compensates field curvature in multi-beam microscopes, improving focus spot uniformity and inspection throughput.

Pulsing the extraction electrode with a capacitor boosts charged particles per pulse while limiting electrode irradiation, gas production, and emitter heating.

Lower chamber temperature, pressure, and plasma power remove photoresist while limiting substrate oxidation, corrosion, and hazardous by-products.

Two-stage HF/NH3 and metal halide treatment clears silicon and metal oxides from metal silicide in recesses to lower wiring resistance.

A two-step plasma etch uses tungsten-containing gas to form sidewall protection, suppress bowing, and preserve mask selectivity.

Carbon-fluorine ratio modulation controls polymer deposition during plasma spacer etching to improve uniformity and reduce substrate loss.

A one-dimensional linear electrode array improves substrate-edge plasma uniformity while simplifying control and reducing calibration effort.

Resonant LC tuning lets multiple electrodes share one RF source while controlling plasma uniformity and reducing matching network cost.

In-situ cleaning plasma removes redeposited metal residues in ion beam etching, cutting MRAM defects and reducing wet-clean downtime.

Optical reflection replaces rough machined targets to measure workpiece height and align electron beam focus more accurately.

An arcuate slit door restores plasma confinement at the transfer slot, improving deposition uniformity while limiting leakage and particles.

Sensor-guided rotation and vertical storage align consumable members like edge rings while reducing substrate tool footprint.

Real-time RF voltage monitoring detects electrostatic chuck deterioration and triggers interlocks before wafer yield is affected.

An inductively excited annular applicator generates azimuthal plasma for in-situ chamber cleaning and deposition thickness control without dismantling.

A conductivity-graded focus ring with a lower edge ring keeps wafer-edge ion angles uniform despite focus ring wear in plasma etching.

Synchronizing RF modulation with the lower-frequency supply cycle suppresses intermodulation distortion and stabilizes reflected power.

Multiple charged particle sources share one condenser lens and manipulator array to expand sub-beam count while limiting aberrations.

Correcting mixed signal electron intensity across multiple detectors helps multi-beam SEMs reduce imaging artifacts and improve image accuracy.

Gravity-center sensing and tray adjustment align semiconductor upper electrodes to improve temperature uniformity, process stability, and yield.

Dynamic source-frequency tuning cuts RF reflection during bias-frequency changes, improving plasma etching and cleaning control.

Stepwise lifting and ion ejection neutralize peeling static on the support film, preventing solder ball shift during substrate separation.

Current sensors and a variable balancing circuit tune coil-section currents to deliver a more uniform plasma field for etching and deposition.

Real-time pulse timing adjustment uses plasma measurements to stabilize density and ion flux, improving uniformity and throughput.

Electronically varying numerical aperture while holding beam pitch constant improves multi-beam microscope resolution without mechanical reconfiguration.

Mortise-and-tenon shutter positioning improves repeatability in vacuum processing while avoiding complex multi-sensor alignment systems.

Metal-and-fluorine ALD coatings protect semiconductor chamber components from halogen plasma corrosion and erosion while shortening coating time.

Multiple ground electrodes with an L-C circuit locally tune center and edge plasma intensity to improve thin film uniformity.

High-pressure nitrogen-hydrogen pretreatment activates the substrate surface to cut silicon nitride incubation time and improve film uniformity.

Coolant-controlled substrate temperature and high-power bias improve carbon-film etch rate and vertical profile in deep, high-aspect-ratio features.

A two-chip asymmetric electrode layout boosts charged-particle beam deflection, avoids pad overlap, and supports stable chip connections.

Separate narrow and wide insulating tubes with a shutoff valve curb parasitic plasma, protect ceramic tubes, and stabilize cleaning gas flow.

A rotating contact plate and locking mechanism let one adapter securely harvest power from multiple military radio batteries.

Two plasma steps deposit protection on the shoulder, then etch the recess bottom to avoid scraping, blockage, and mask damage.

Ionized gas is directed onto the emitter surface for in-situ back-sputtering cleaning, reducing source downtime and contamination.

Ground straps and a slotted confinement plate keep RF grounding continuous while improving flow equalization and contaminant removal in preclean chambers.

Pattern-edge reflection scans detect device-layer offsets in real time, improving e-beam overlay precision and wafer throughput.

Photovoltage-generating anode layers lower work function in thermionic converters, boosting efficiency while limiting recombination.

A movable seal plate lets one controller manage multiple plasma chamber vacuum ports, cutting actuator count, space use, and control failures.

Capacitively coupled current sensing tracks plasma stability and dielectric coating wear in real time to prevent punch-through and downstream defects.

Multiple low-pixel microscope frames are aligned and combined to raise image resolution while preserving frame rate and signal quality.

Dual-side cooling gas keeps the wafer bevel and top plate cleaner during indium plasma etching, reducing residue buildup and downtime.

A first anode aperture measures beam current in real time, enabling extractor voltage feedback that keeps inspection images stable.

Alternating ion-beam milling through paired shields cuts cross-section tilt in thick samples and shortens through-hole processing time.

A dual-pin stage ring layout absorbs chamber thermal expansion to keep a narrow, uniform gap for stable gas partitioning and plasma formation.

Sequential halide vapor pulses enable plasma-free atomic layer etching with monolayer control, lower surface damage, and cleaner substrates.

A protective blade, inert gas feed, and cooling shield valve seals from plasma-activated gas, reducing leakage and replacement downtime.

Separate precursor lines and switchable diversion cut purge time and cross-contamination in 3D NAND stack deposition.

Concentric semiconductor shells and a spherical radiator enable accurate fast neutron spectrum measurement in compact, portable spaces.

RF dry plasma disinfects PPE and sensitive instruments in a sealed chamber, reducing pathogens without heat, corrosive aerosols, or additives.

An asymmetric electrode area layout boosts plasma generation while limiting heat-driven deformation for more uniform film deposition.

A proxy electrode with segmented openings guides primary and backscattered particles to separate detectors.

Virtual model simulates beam position variations caused by vibrations to bypass faulty laser measurement systems and reduce evaluation time.

Correction lens positioned at a crossover point cancels multiple aberrations to maintain resolution during 3D imaging.

An electrostatic chuck measures leakage current to determine substrate resistivity changes for real-time heater setpoint adjustments.

Active cooling channels reduce faceplate temperature by over 200°C, enabling higher RF power without melting the showerhead.

Remote plasma sputtering generates crystalline films directly on low-melting-point substrates, eliminating the need for post-deposition annealing steps.

A field-enhancing waveguide directs microwave energy parallel to gas flow to generate stable plasma.

Segmented electrode filaments eliminate standing waves and metal contamination to boost plasma uniformity.

Segmented electron gun design uses a pinnacle limiting plate to maintain constant beam current, reducing Coulomb interactions without increasing landing energy.

A treatment head with an exit window directs accelerated charge carriers through a container mouth to sterilize the inner wall.

Nitrogen purge gas distribution via a showerhead collar eliminates parasitic plasma, reducing power loss and within-wafer non-uniformity.

A pedestal alignment tool uses optical fields to detect misalignment and guide precise positioning of ion implant orienter pedestals.

A temperature adjustment device uses a heat pump to transfer thermal energy between media flow passages.

A gas cooling interface regulates thermal conductance between a cooling plate and an ion source chamber to stabilize operating temperatures.

A replaceable liner covers the inner sidewall of an ion collecting cup to block ions and prevent residual coating formation.

Tilting ion beam preparation uses datum shield alignment to reduce handling time and minimize sample damage during surface processing.

Separating gas distribution from plasma generation prevents substrate damage and improves thin film quality.