Electric Discharge Tubes TRIZ Cases

Off-beam current sensing on the aperture plate enables real-time exposure time correction for more consistent E-beam mask patterning.

Offset third electrodes discharge charged particles on the chuck surface, reducing wafer misalignment during release and delivery.

Filtered reflected-wave monitoring lets multiple RF plasma sources suppress frequency interference and keep substrate processing stable.

Time-variant power measurements at two matching-circuit locations reveal plasma ignition state more reliably while protecting the RF generator.

Keeping the wafer still during gas dosing, then rotating it by a set angle between cycles, improves film thickness uniformity across the substrate.

Separate rotating magnet units confine low-pressure plasma for stable copper film coverage while removing target center re-deposition.

A dense Mn-Ta-W-Cu-O target with Mn4Ta2O9 suppresses abnormal discharge in DC sputtering, enabling stable recording-film deposition.

A shared lifter pin transfers edge and cover rings through aligned holes, simplifying ring exchange and saving space in plasma tools.

A tubular and footed confinement ring controls radical exhaust near the wafer edge to reduce back diffusion and improve etch uniformity.

A bundled drift-tube layout with Vernier cathodes enables precise 3D muon tracking in confined boreholes for radiography and geotomography.

A split coolant path with a narrower outer channel improves temperature control at the wafer edge while maintaining overall heat removal.

A shroud discharge slit layout boosts edge-region etching rate and improves uniformity for high-stack V-NAND substrate processing.

Multiple X-ray sources and joined detectors enable DR and CT imaging in one therapy platform, improving targeting while reducing patient repositioning.

Ion implantation tunes a backside stress compensation film to counter wafer in-plane distortion and improve flatness in downstream fabrication.

Synchronized low- and high-frequency RF pulsing balances sidewall passivation and mask selectivity while reducing nitride bow formation.

A downstream cleaning gas inlet in the pumping liner targets exhaust-side residue buildup, improving chamber cleaning while reducing gas use and downtime.

A conductance-based model converts exit-path pressure readings into chamber and substrate pressure estimates for tighter process control.

Microwave plasma densifies spin-on dielectric near CFET contacts at low temperature, avoiding anneal damage to metal gate structures.

Non-contact heating and coil position control raise radical concentration for more efficient semiconductor substrate processing.

A conical stationary-to-rotating contact boosts current transfer in rotary sputtering cathodes while reducing carbon wear, sealing damage, and heat buildup.

A silver-zinc-antimony reflective layer preserves display reflectivity while improving chemical, heat, and weather resistance.

A two-piece bush with a protruding interlock cuts bush-to-puck tolerance, blocks plasma ingress, and reduces particle generation.

Camera-based plasma imaging detects chamber drift during processing, enabling real-time wafer uniformity control without ex situ metrology.

Beam-guided process gas repair uses control-bandwidth-based shape planning to correct photomask defects with sharper, more precise edges.

Grouped ON/OFF timing lowers instantaneous beam current in multiple-beam writing, reducing Coulomb-induced position errors without extra data transfer.

Annular protrusions and recesses create a labyrinth path that blocks sputtered reactants from ring contact parts, reducing adhesion and wafer transfer failure.

Separate gas control for electrically linked hollow cathode tubes extends plasma source life and raises power without excess cathode emission.

A sector-shaped SEM detector captures asymmetric secondary electrons while reducing area, leakage current, capacitance, and shield assembly steps.

Back-side illumination and telecentric imaging build a 3D sample map that speeds microscope positioning and helps avoid alignment errors or collisions.

Position-independent cross-talk correction in detector arrays improves charged-particle signal accuracy and image quality at high throughput.

Brightness-entropy second-derivative analysis of SEM images improves focused ion beam delayer end point detection at layer transitions.

State-dependent frequency and impedance matching cuts IMD-driven reflected wave power between pulsed ON and OFF periods.

An ICP chamber with embedded dual-zone pedestal heating and rotation deposits uniform carbon films at lower temperatures with less device damage.

A two-member stage combines low weight with high heat conduction and low thermal expansion to improve chuck cooling and reduce cracking risk.

Continuous in-chamber resist slimming and oxide deposition cut contamination risk, cost, and pattern width variation in fine mask forming.

Top-side purge gas inlet and bottom-side exhaust create uniform chamber flow, limiting gas retention and particle buildup during substrate transfer.

A deflection unit redirects ion or electron beams onto one optical axis, enabling multi-beam imaging and processing without losing focus quality.

A longer hydrogen-plasma step before nitrogen-hydrogen plasma improves nitride film purity while minimizing residual stress after cooling.

A split frame and rigid supports isolate power-connection forces from the source, preserving charged particle beam alignment during handling.

Organosilicon precursor dosing after ALD raises wafer hydrophobicity, improving photoresist adhesion and reducing mask collapse or lift-off.

Real-time RF waveform capture over EtherCAT enables plasma emission monitoring and immediate RF plate power adjustment in PEALD.

Alternating gas channels and equal-length feed paths balance CVD and ALD gas flow to improve film thickness uniformity across substrates.

Rapid showerhead temperature adjustment using heat-control and gas-distribution layers helps prevent etch clogging and critical dimension bowing.

High-density nitrogen plasma forms diffusion barrier layers in high-k MIM capacitors to suppress leakage and preserve capacitance.

Measured fluorine radical levels guide remote plasma and chamber settings to cut gas waste, recombination loss, and equipment wear.

Embedded electrode plates in a dielectric grid stabilize ion beam extraction while lowering dielectric breakdown and electrode fracture risk.

Ramped bias pulse frequency separates deposition from etching, controlling ion energy to reduce recesses, necking, and material loss.

External actuators and arm-guided RF cable routing let the sample stage move vertically without enlarging the vacuum vessel or destabilizing plasma.

A charged particle mirror compensates field curvature in multi-beam microscopes, improving focus spot uniformity and inspection throughput.

Pulsing the extraction electrode with a capacitor boosts charged particles per pulse while limiting electrode irradiation, gas production, and emitter heating.