Microwave Plasma Dielectric Treatment for Low-Thermal-Budget CFET Contacts
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Solution Overview
Problem
Existing methods for forming dielectric materials in semiconductor devices often require high-temperature annealing, which can damage other components like metal gate structures and increase the thermal budget, leading to issues such as threshold voltage shifting and on-state current degradation.
Innovation Solution
A method involving spin-on deposition of a dielectric material followed by a microwave plasma treatment is used, allowing for the formation of a dielectric layer with uniform quality and high density at a low process temperature, thereby reducing the risk to existing structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-temperature annealing is used to form dielectric material, then dielectric quality is improved, but other device components are damaged and thermal budget increases
Solution Approach 1:
The patent changes the temperature parameter from high-temperature annealing to low-temperature microwave plasma processing, achieving dielectric material activation and densification without exposing other components to damaging high temperatures. This parameter change resolves the contradiction by finding an alternative processing condition that achieves the same dielectric quality improvement without the harmful thermal effects.
Solution Approach 2:
The patent replaces the thermal field (heat-based annealing) with a microwave plasma field, substituting a mechanical/thermal process with an electromagnetic field-based process. This substitution allows dielectric material modification through microwave-induced plasma chemistry rather than thermal diffusion, avoiding damage to temperature-sensitive components while achieving the desired dielectric properties.
2Manufacturing precision
If high-temperature annealing is used to form dielectric material, then dielectric density is improved, but thermal budget increases
Solution Approach 1:
The patent changes the temperature parameter from high-temperature processing to low-temperature microwave plasma processing, achieving dielectric densification through microwave-induced plasma activation rather than thermal diffusion. This parameter change resolves the contradiction by decoupling dielectric quality improvement from high temperature requirements.
Solution Approach 2:
The patent substitutes thermal energy with microwave plasma energy to achieve dielectric material densification. The microwave plasma provides the necessary activation energy through electromagnetic field interaction with the dielectric material, replacing the traditional thermal mechanism and thereby reducing the thermal budget while maintaining dielectric quality.
3Quantity of substance
If conventional dielectric deposition is used, then dielectric material is formed, but uniformity and quality are insufficient
Solution Approach 1:
The patent applies microwave plasma treatment to conventional dielectric materials, substituting passive deposition with active plasma-enhanced processing. The microwave plasma uniformly activates and densifies the dielectric material throughout the layer, improving uniformity and quality by ensuring consistent plasma exposure and energy distribution across the entire dielectric structure.
Solution Approach 2:
The patent introduces microwave plasma parameters (power, pressure, gas composition) to the dielectric processing, transforming the material properties through controlled plasma exposure. This parameter change enables precise control over dielectric uniformity and quality, achieving consistent material properties that cannot be obtained through conventional deposition alone.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a dielectric layer with uniform quality and high density without the need for high-temperature annealing, reducing the thermal budget and minimizing damage to other device components, while also enabling seamless integration with subsequent processing steps.
Implementation Method 1
treating the dielectric material with a microwave plasma
Implementation Method 2
treating the dielectric material with a microwave plasma
Data Source
AI summary
A low thermal budget dielectric material deposition process is provided. The dielectric material may be deposited using spin-on coating, and treated with a microwave plasma treatment. In some implementations, the dielectric material is used adjacent a contact feature of a CFET device, such as a contact feature providing connection to a source/drain region of a bottom transistor of a CFET device.