Substrate Processing Apparatus Plasma Gas Separation

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Solution Overview

Problem

Existing substrate processing apparatuses face issues with plasma discharge damaging substrates and causing deterioration in thin film quality due to the overlap of gas distribution and plasma formation spaces.

Innovation Solution

A substrate processing apparatus with a gas distribution module that includes a lower frame, an upper frame with protruding electrodes, and an insulating plate, where the plasma is generated in a gap space between the frames, preventing direct plasma discharge on the substrate and ensuring uniform gas distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the gas distribution space and plasma formation space are overlapped in existing substrate processing apparatuses, then the processing gas can be supplied to the reaction space, but the plasma discharge damages the substrate and deteriorates thin film quality

Engineering Contradiction:
Improveprocessing gas distributionVSAvoidsubstrate damage from plasma discharge
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The apparatus divides the gas distribution function and plasma formation function into separate spatial zones. The gas distribution module includes a lower frame with gas distribution holes positioned below the plasma electrode, creating distinct gas distribution space and plasma formation space. Processing gas is distributed through the lower frame before reaching the plasma region, preventing direct plasma discharge damage to the substrate while ensuring uniform gas distribution.

Inventive Principle:
Principle #1Segmentation

2Reliability

If particles of abnormal thin film fall down on the substrate, then the substrate is contaminated, but this results from the overlap of gas distribution and plasma spaces

Engineering Contradiction:
Improvesubstrate qualityVSAvoidabnormal thin film particles
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The harmful effect of abnormal thin film particle formation is eliminated by extracting the gas distribution function from the plasma formation space. The gas distribution holes are relocated to the lower frame, separating the gas supply pathway from the plasma discharge region. This prevents the formation of abnormal powder components that would otherwise fall onto the substrate and contaminate it.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design minimizes substrate damage and improves thin film quality by preventing plasma discharge on the substrate and reducing abnormal film formation, while maintaining uniform plasma distribution for consistent film deposition.

Implementation Method 1

the RF power is supplied to the plasma electrode 20 so as to form plasma discharge (P) between the gas distributing means 40 and the susceptor 30, whereby molecules of the processing gas ionized by the plasma discharge (P) are deposited on the substrate (S)

Methodology Applied
Scientific EffectPlasma discharge: Plasma

Implementation Method 2

molecules of the processing gas ionized by the plasma discharge (P) are deposited on the substrate (S)

Methodology Applied
Scientific EffectIonization: Ionisation

Implementation Method 3

The gas distributing means 40 uniformly distributes the processing gas to the entire area of the reaction space through a plurality of gas distributing holes 44 being communicated with the gas buffer space 42

Methodology Applied
Scientific EffectGas distribution:

Implementation Method 4

The processing gas is produced by mixing source gas and reaction gas to form a predetermined thin film on the substrate (S)

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS11075060B2Substrate processing apparatus
Publication Date: 2021.07.27 JUSUNG ENG
  • US11075060B2 patent drawing
  • US11075060B2 patent drawing
  • US11075060B2 patent drawing

AI summary

Disclosed is an apparatus for processing substrate which prevents a plasma discharge from being transferred to a substrate so as to minimize damages on the substrate and also minimize deterioration in quality of a thin film deposited on the substrate, wherein the apparatus may include a process chamber for providing a reaction space, and a gas distribution module for dissociating processing gas by the use of plasma, and distributing the dissociated processing gas onto a substrate, wherein the gas distribution module may include a lower frame having a plurality of electrode inserting portions, an upper frame having a plurality of protruding electrodes and processing gas distribution holes, and an insulating plate having a plurality of electrode penetrating portions.