Semiconductor Chamber Liner Cleaning for Downstream Residue Control

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Solution Overview

Problem

Existing semiconductor chamber cleaning methods are inefficient in reaching and cleaning downstream components, such as the pumping liner and exhaust areas, due to the orientation of plasma sources upstream of the processing region, leading to incomplete cleaning and residue buildup.

Innovation Solution

The introduction of a standalone cleaning gas source connected to the chamber via a modified pumping liner with inlet apertures located below the faceplate, allowing direct cleaning of chamber components without traversing the faceplate, and enabling simultaneous cleaning during processing operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If a remote plasma source is located upstream of the showerhead and blocking plate, then higher power plasmas can be generated without damaging substrates, but the plasma radicals cannot reach the downstream chamber components effectively

Engineering Contradiction:

Improveplasma powerVSAvoidcleaning effectiveness

Core Design Contradiction:

PowerVSReliability

Solution Approach 1:

The invention divides the plasma source functionality into two separate sources: an upstream plasma source for generating high power plasma during processing, and a downstream plasma source specifically for cleaning chamber components. This segmentation allows each plasma source to be optimized for its specific function without compromise.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The invention introduces a downstream plasma source as an intermediary cleaning mechanism that directly treats chamber components without requiring radicals to traverse the showerhead and blocking plate. This intermediary source bridges the gap between plasma generation and component cleaning.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If cleaning is performed using traditional upstream plasma sources, then substrate processing can be maintained, but downstream components such as the pumping liner and exhaust areas remain uncleanned

Engineering Contradiction:

Improveprocessing continuityVSAvoidresidue buildup

Core Design Contradiction:

ProductivityVSObject-generated harmful factors

Solution Approach 1:

The downstream plasma source is positioned to perform preliminary cleaning of chamber components before residues can accumulate to problematic levels. The source continuously or periodically cleans surfaces in the processing region, preventing residue buildup rather than addressing it after the fact.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The downstream plasma source enables continuous cleaning action during substrate processing operations. Rather than requiring separate cleaning cycles, the cleaning function operates concurrently with processing, maintaining chamber cleanliness without interrupting production.

Inventive Principle:

Principle #20Continuity of useful action

3Ease of operation

If the cleaning gas source is positioned upstream, then the cleaning gas can be delivered to the substrate, but the downstream portions of the chamber are not efficiently cleaned

Engineering Contradiction:

Improvegas deliveryVSAvoidcleaning coverage

Core Design Contradiction:

Ease of operationVSManufacturing precision

Solution Approach 1:

Instead of delivering cleaning gas from the upstream position where processing gas is delivered, the invention inverts the approach by positioning the cleaning plasma source downstream, directly at the chamber components that require cleaning. This reversal of the conventional gas delivery approach enables effective cleaning of previously inaccessible areas.

Inventive Principle:

Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the cleaning efficiency of semiconductor chamber components, reduces the volume of cleaning gas required, and minimizes downtime by allowing continuous cleaning and residue management during processing.

Implementation Method 1

some chambers include remote plasma sources in order to generate higher power plasmas

Methodology Applied

Scientific EffectPlasma: Plasma

Data Source

PatentUS20250140537A1Chamber and methods for downstream residue management

Publication Date: 2025.05.01 APPLIED MATERIALS INC

AI summary

Semiconductor processing chambers and systems, as well as methods of cleaning such chambers and systems are provided. Processing chambers and systems include a chamber body that defines a processing region, a liner positioned within the chamber body that defines a liner volume, a faceplate positioned atop the liner, a substrate support disposed within the chamber body, and a cleaning gas source coupled with the liner volume through a cleaning gas plenum and one or more inlet apertures. Systems and chambers include where at least one of the one or more inlet apertures is disposed in the processing region between the faceplate and a bottom wall of the chamber body.