Plasma Etching of Carbon Films with Cryogenic Temperature Control
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Solution Overview
Problem
Current plasma processing methods face challenges in achieving precise control over substrate temperature and etching shape during the etching of carbon-containing films, leading to suboptimal etching rates and processing shapes, particularly for deep holes with high aspect ratios.
Innovation Solution
A plasma processing method using an inductively coupled plasma processing apparatus that controls the substrate temperature between −70°C and 100°C by supplying coolant, generates a high-power RF or DC bias signal to etch carbon-containing films, and adjusts the temperature and signal parameters dynamically to optimize etching conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional plasma processing methods are used to etch carbon-containing films, then the etching process can be performed, but the etching rate is low and the processing shape precision is insufficient
Solution Approach 1:
The patent applies parameter changes by precisely controlling substrate temperature within the range of -70°C to 100°C and adjusting RF power parameters to optimize the etching process. This enables simultaneous achievement of high etching rate and precise processing shape control by modifying physical parameters of the plasma environment
Solution Approach 2:
The patent implements dynamic control of etching conditions by adjusting temperature and RF power parameters during the etching process. This dynamic adjustment allows the system to adapt to changing process conditions and maintain optimal etching performance throughout the operation
2Manufacturing precision
If substrate temperature is not controlled during etching, then the process is simpler, but the etching shape control and aspect ratio are insufficient
Solution Approach 1:
The patent introduces temperature control as a critical parameter, maintaining substrate temperature between -70°C and 100°C to achieve precise etching shape control and high aspect ratio structures. This parameter control, while adding system complexity, enables superior manufacturing precision that justifies the added complexity
3Productivity
If high RF power is used to increase etching rate, then productivity improves, but temperature control becomes more difficult
Solution Approach 1:
The patent employs dynamic coordination between RF power input and temperature control mechanisms. By adjusting RF power parameters and temperature control in real-time, the system maintains optimal etching rate while preventing excessive temperature rise, achieving both high productivity and temperature control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method achieves a higher etching rate while improving the vertical shape and aspect ratio of etched recesses, ensuring a more precise and efficient plasma etching process.
Implementation Method 1
supplying a coolant to the substrate support to control a temperature of the substrate support
Implementation Method 2
generating a plasma from the processing gas in the chamber by a source RF signal
Implementation Method 3
generating a plasma from the processing gas in the chamber by a source RF signal
Implementation Method 4
supplying a bias signal to the substrate support to etch the carbon-containing film
Data Source
AI summary
A plasma processing method includes: (a) providing a substrate on a substrate support in a chamber; (b) supplying a coolant to control a temperature of the substrate support; (c) supplying a processing gas into the chamber; and (d) in a state where (b) is being performed, generating plasma from the processing gas in the chamber by a source RF signal, and supplying a bias signal to etch the carbon-containing film. In (d), the coolant of (b) is set such that the substrate or the substrate support reaches a target temperature of −70° C. to 100° C. during plasma etching, the source RF signal in (d) is an RF signal having a power of 2 kW or more, and the bias signal in (d) is a bias RF signal having a power of 2 kW or more or a bias DC signal including a voltage pulse of 2 kV or more.