Semiconductor Wafer Bearing Ring Structure to Prevent Sputtering Adhesion
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Solution Overview
Problem
Existing semiconductor process bearing devices are prone to adhesion during magnetron sputtering, leading to the falling of the deposition ring, wafer transfer failure, and chipping of the wafer.
Innovation Solution
A semiconductor process apparatus with a bearing device featuring a base, deposition ring, and cover ring, where the inner ring portion of the cover ring covers the outer ring portion of the deposition ring, and a labyrinth passage is formed between them using annular protrusions and recesses to increase the difficulty of reactant deposition reaching the contact parts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the contact parts of the cover ring and deposition ring are placed close to the groove for compact structure, then the device complexity is reduced, but the reliability deteriorates due to adhesion causing deposition ring falling and wafer transfer failure
Solution Approach 1:
The patent introduces a reactant barrier layer as an intermediary substance between the groove and contact parts. This barrier layer prevents direct contact between reactants and contact surfaces, eliminating adhesion while maintaining compact structure. The barrier layer is deposited to fill the groove and extend toward contact parts, creating a protective interface that solves the reliability issue without increasing structural complexity.
2Manufacturing precision
If the groove is positioned close to contact parts to protect the base, then the manufacturing precision is improved for base protection, but the reliability worsens due to reactant accumulation causing adhesion
Solution Approach 1:
The reactant barrier layer serves as a mediator that allows the groove to remain close to contact parts for effective base protection, while simultaneously preventing reactant accumulation from causing adhesion. The barrier layer is strategically deposited to fill the groove and create a protective interface, enabling both base protection and adhesion prevention to coexist.
Solution Approach 2:
The patent changes the physical and chemical parameters of the contact surfaces by depositing a barrier layer with different material properties. This alters the surface energy and chemical composition of contact parts, making them resistant to reactant adhesion while maintaining their protective function near the groove.
3Device complexity
If the deposition ring inner diameter is made smaller than wafer diameter for compact design, then the device complexity is reduced, but the reliability deteriorates when adhesion causes wafer lifting and chipping
Solution Approach 1:
The reactant barrier layer acts as an intermediary protection that enables compact design with smaller deposition ring inner diameter. By preventing adhesion at contact parts, the barrier layer ensures that even when the deposition ring is close to the wafer edge, no harmful lifting or chipping occurs during wafer transfer, thus maintaining reliability in a compact configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The labyrinth passage significantly increases the distance and difficulty for reactants to reach the contact parts, reducing the probability of adhesion between the cover ring and deposition ring, thereby preventing the falling of the deposition ring and ensuring successful wafer transfer.
Implementation Method 1
A common manufacturing process is a magnetron sputtering
Implementation Method 2
a plurality of annular protrusions and a plurality of annular recesses are disposed at two opposite surfaces between the inner ring portion of the cover ring and the outer ring portion of the deposition ring, so as to form a labyrinth passage between the annular groove and contact parts of the cover ring and the deposition ring
Data Source
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AI summary
The present disclosure provides a semiconductor process apparatus and a bearing device therefor, and relates to the semiconductor process technology. The bearing device for the semiconductor process apparatus includes: a base, which includes a first surface and a second surface, the first surface being configured to bear a wafer, a height of the second surface being smaller than a height of the first surface, and the second surface being disposed around the first surface; a deposition ring, which includes an upper surface provided with an annular groove, and a lower surface covering the second surface; and a cover ring, an outer ring portion of the cover ring being supported on a liner of a reaction chamber of the semiconductor process apparatus, an inner ring portion of the cover ring covering an outer ring portion of the deposition ring, and a plurality of annular protrusions and a plurality of annular recesses being disposed at two opposite surfaces between the inner ring portion of the cover ring and the outer ring portion of the deposition ring, so as to form a labyrinth passage between the annular groove and contact parts of the cover ring and the deposition ring. The bearing device of the present disclosure can effectively reduce probability of adhesion between the cover ring and the deposition ring during a semiconductor processing process.