Electrostatic Chuck Temperature Control via Leakage Current
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Solution Overview
Problem
In semiconductor substrate processing, maintaining precise substrate temperature control is challenging due to temperature fluctuations, especially as feature sizes decrease and processing chamber temperatures increase, requiring more accurate methods to control substrate temperature during high-temperature plasma processing.
Innovation Solution
The method employs an electrostatic chuck with a dielectric material and electrode as a substrate temperature sensor, measuring leakage current to adjust the heater temperature setpoint, allowing for real-time control of the substrate temperature using a system controller, thereby maintaining the target substrate temperature within a narrow tolerance range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional temperature sensors and control methods are used, then substrate temperature can be monitored, but the system requires complex sensors and frequent recalibrations, increasing device complexity and maintenance time
Solution Approach 1:
The electrostatic chuck serves dual functions: it both chucks the substrate and acts as a temperature sensor. By monitoring the chucking voltage and leakage current, the system determines substrate temperature without requiring separate temperature sensors, thereby reducing device complexity while maintaining measurement precision
Solution Approach 2:
The electrostatic chuck is designed to perform multiple functions simultaneously: substrate clamping and temperature sensing. This multi-functionality eliminates the need for dedicated temperature sensors and reduces the overall system complexity while providing accurate temperature measurement through electrical parameter monitoring
2Reliability
If traditional temperature control methods are used, then substrate temperature can be maintained, but frequent recalibrations and maintenance are required, increasing loss of time for quality control operations
Solution Approach 1:
The system continuously monitors electrical parameters (chucking voltage, leakage current) of the electrostatic chuck and uses this feedback to determine substrate temperature in real-time. This continuous feedback mechanism maintains reliable temperature control without requiring frequent manual recalibrations or interruptions for quality control checks
Solution Approach 2:
The temperature monitoring and control process operates continuously during substrate processing by constantly measuring electrical parameters of the electrostatic chuck. This continuous operation eliminates the need for intermittent maintenance stops and ensures uninterrupted quality control, reducing loss of time
3Stability of the object's composition
If heater temperature setpoint is increased to maintain substrate temperature, then substrate temperature stability improves, but energy consumption increases
Solution Approach 1:
The heater temperature setpoint is dynamically adjusted based on real-time substrate temperature determination from electrical parameters. Rather than maintaining a constantly high setpoint, the system adapts the heater power to match actual temperature needs, ensuring temperature stability while minimizing unnecessary energy consumption during different processing stages
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively maintains substrate temperature at a target value with reduced need for complex temperature sensors and frequent recalibrations, minimizing downtime for maintenance and quality control operations.
Implementation Method 1
determining a first parameter change corresponding to a resistivity change in the electrostatic chuck
Implementation Method 2
heating a first substrate using a heater apparatus
Data Source
AI summary
A processing chamber and a processing method for processing a substrate in the processing chamber with thermal control are described herein. The method includes heating a first substrate using a heater apparatus during a first processing operation. The heater apparatus has a first setpoint during at least a first portion of the first processing operation. The first substrate is disposed on a substrate support surface of an electrostatic chuck in a processing chamber. The method further includes determining a first parameter change corresponding to a resistivity change in the electrostatic chuck, determining a second setpoint for the heater apparatus based on the first parameter change, and controlling the heater apparatus to the second setpoint.