Switchable Precursor Delivery Lines for Faster 3D NAND Deposition
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Solution Overview
Problem
The increasing complexity of 3D NAND structure production leads to longer processing times due to the need for multiple paired layers and extensive purge operations to prevent residual precursor contamination, resulting in reduced production rates and film quality issues.
Innovation Solution
The implementation of a semiconductor processing system with separate fluid delivery lines and precursor diversion methods, allowing for simultaneous delivery and diversion of precursors, reducing pump operations and cross-contamination, and enabling faster production of initial material stacks with improved film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If multiple paired layers are produced within the same chamber to form stacked memory structures, then the complexity and integration of the semiconductor device is improved, but the processing time increases due to longer deposition sequences and extensive purge operations
Solution Approach 1:
The patent divides the precursor delivery system into separate independent lines (first precursor delivery line and second precursor delivery line) for different precursor materials. This segmentation allows each line to be independently controlled and purged, enabling parallel processing operations and reducing the time required for sequential purge operations between layer depositions.
Solution Approach 2:
The system performs preliminary purging of precursor lines before switching between different precursors. By pre-purging the inactive precursor line while the active line is delivering precursor, the system prepares for rapid switching without requiring extensive purging after the switch, thereby reducing overall processing time for multi-layer deposition.
2Manufacturing precision
If extensive purge operations are performed to remove residual precursors from the chamber and delivery lines, then the purity and quality of deposited films is improved, but the production rate decreases
Solution Approach 1:
By segmenting the precursor delivery into separate independent lines, the patent enables targeted purging of only the line containing residual precursor, rather than requiring purging of the entire chamber and all delivery lines. This selective purging maintains film quality while reducing purge time and increasing production rate.
Solution Approach 2:
The system performs purging actions selectively and partially - only purging the specific precursor line that contains residual precursor, rather than performing exhaustive purging of all lines and the entire chamber. This partial action is sufficient to maintain film quality while significantly reducing the time penalty.
3Productivity
If residual precursors are not thoroughly removed from delivery lines, then the production speed increases, but cross-contamination between layers occurs reducing film quality
Solution Approach 1:
The patent segments the precursor delivery system into separate independent lines, allowing each line to be independently purged and controlled. This enables rapid switching between precursors with minimal purging of only the active line, maintaining production speed while preventing cross-contamination through effective isolation of precursor pathways.
Solution Approach 2:
The system uses inert gas or vacuum as an intermediary medium to clear residual precursors from delivery lines during switching operations. This intermediary purging method efficiently removes contaminants without requiring extensive evacuation time, enabling fast precursor switching while maintaining film quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces processing time for initial material stacks and enhances film quality by minimizing cross-contamination between layers, enabling production rates greater than one wafer per hour while maintaining high integrity and consistency.
Implementation Method 1
a remote plasma source coupled with the lid stack
Implementation Method 2
delivering a first deposition precursor through a first transmission line and a first delivery line to a processing chamber of a semiconductor processing system to form a first layer of material on a substrate
Data Source
AI summary
Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly couple the gas panel with the output manifold of the processing chamber. A delivery line may extend from the input manifold to the output manifold. The systems may include a first transmission line extending from a first set of precursor sources of the gas panel to the delivery line. The systems may include a second transmission line extending from a second set of precursor sources of the gas panel to the delivery line. The second transmission line may be switchably coupled between the delivery line and an exhaust of the semiconductor processing system.