Remote Plasma Sputtering for Crystalline Film Deposition
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Solution Overview
Problem
Current deposition technologies face challenges in achieving high deposition rates of crystalline materials without the need for annealing steps, particularly for materials with low melting points, which limits the choice of substrates and reduces production throughput in manufacturing electronic components like layered oxide thin-films.
Innovation Solution
A plasma sputtering method where the plasma is generated remotely from the sputter target and confined between the target and substrate, allowing for the direct formation of crystalline films on substrates with low melting points without annealing, using a roll-to-roll process to facilitate high throughput and efficient material utilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional plasma deposition is used to deposit crystalline materials, then the material can be deposited on the substrate, but the deposition rate is low and annealing steps are required which limits substrate choices and reduces production throughput
Solution Approach 1:
The plasma generation process is segmented into two independent parts: plasma generation occurs remotely from the sputter target, while the plasma is then transported to interact with the target and substrate. This segmentation allows optimization of plasma generation conditions separately from deposition conditions, enabling high deposition rates without requiring complex in-situ plasma generation and annealing systems.
Solution Approach 2:
A remote plasma source acts as an intermediary between the plasma generation system and the sputter target/substrate system. The plasma is generated in a remote chamber, transported through a transfer region, and then introduced to the deposition chamber where it interacts with the target and substrate. This intermediary approach enables high-rate crystalline deposition without direct plasma contact during target sputtering, eliminating the need for post-deposition annealing.
2Manufacturing precision
If annealing steps are performed on deposited films to achieve crystalline structure, then crystalline material is obtained, but substrates with low melting points cannot be used and production throughput is reduced
Solution Approach 1:
The plasma is generated and prepared in advance in a remote chamber before being introduced to the sputter target and substrate. This preliminary plasma generation allows the plasma to be fully developed and stabilized before interacting with the target, enabling direct formation of crystalline structures during deposition without requiring subsequent annealing steps. This preserves substrate integrity for low melting point materials.
Solution Approach 2:
The thermal annealing process (thermal energy treatment) is replaced by a plasma-based process where ion bombardment and plasma chemistry directly induce crystalline structure formation during deposition. This substitution eliminates the need for high-temperature thermal treatment, enabling use of low melting point substrates while maintaining crystalline film quality.
3Productivity
If plasma is generated close to the sputter target for efficient material sputtering, then sputtering efficiency is high, but plasma control becomes difficult and target utilization is reduced
Solution Approach 1:
The plasma generation function is extracted from the immediate vicinity of the sputter target and relocated to a remote chamber. The plasma is generated separately, then transported to the target region. This extraction allows independent optimization of plasma generation conditions for efficiency while maintaining simple plasma control through remote generation, and improves target utilization by preventing plasma-induced target damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the rapid production of crystalline films on flexible substrates with low melting points, such as polymers, without the need for annealing, enhancing material choices and production rates while maintaining substrate integrity and efficiency.
Implementation Method 1
depositing material by means of a plasma sputtering technique, wherein the plasma is generated remotely from the material to be sputtered
Implementation Method 2
generating a plasma remote from a sputter target or targets suitable for plasma sputtering
Implementation Method 3
depositing the sputtered material on the substrate
Data Source
AI summary
A method of manufacturing an electronic component including a substrate is provided. The method includes generating a plasma remote from a sputter target, generating sputtered material from the sputter target using the plasma, and depositing the sputtered material on a substrate as a crystalline layer.