Plasma Etching Shroud Slit Layout for Edge Rate Uniformity
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Solution Overview
Problem
In semiconductor manufacturing, particularly in vertical NAND (V-NAND) products, defects arise due to etching rate differences between substrate regions, which worsen with increasing stack numbers.
Innovation Solution
A substrate processing method and apparatus that involves inserting a substrate into a processing space defined by a shroud unit, producing plasma for etching, and utilizing a discharge part with specific slit configurations to enhance etching rates, particularly in edge regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacks in a substrate is increased to improve device capacity, then the device functionality is enhanced, but etching rate difference between substrate regions increases causing defects
Solution Approach 1:
The patent applies local quality by configuring different discharge parts (first discharge parts and second discharge parts) with different slit arrangements to provide different plasma conditions to different regions of the substrate. The first discharge parts with first slits target the edge region while the second discharge parts with second slits target the center region, creating locally optimized etching conditions for each zone to maintain uniform etching rate across the entire substrate despite increased stack density.
2Productivity
If conventional discharge structures are used, then the apparatus structure is simple, but etching rate in edge region is insufficient
Solution Approach 1:
The discharge part is segmented into multiple independent discharge parts (first discharge parts and second discharge parts) with different slit configurations. The first discharge parts include first slits oriented in a first direction while the second discharge parts include second slits oriented in a second direction different from the first direction. This segmentation allows independent optimization of plasma discharge characteristics for different substrate regions, thereby improving edge region etching rate without compromising overall system functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases the etching rate in the edge region of the substrate, thereby enhancing the throughput yield of semiconductor devices and reducing defects.
Implementation Method 1
producing plasma based on the process gas
Implementation Method 2
performing an etching process to cause etching of the substrate using ions included in the plasma
Data Source
AI summary
A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.