Fine Pattern Oxide Deposition After In-Chamber Resist Slimming
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Solution Overview
Problem
Existing methods for forming fine patterns with pitches below the resolution limit of photolithographic techniques require additional dimension correcting processes, such as slimming, trimming, or smoothing, which increase manufacturing costs and can lead to defects in the silicon oxide film due to dust or foreign matter adhering to the resist pattern.
Innovation Solution
A method and apparatus for forming mask patterns and fine patterns by continuously performing slimming and film deposition steps in a film deposition apparatus, using a source gas and an oxygen radical or oxygen-containing gas to form an oxide film, thereby reducing costs and maintaining the dimensions of resist patterns to minimize differences between top and bottom widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If additional dimension correcting processes (slimming, trimming, smoothing) are performed to correct pattern dimensions, then manufacturing precision is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent performs slimming of the resist pattern before forming the silicon oxide film. By correcting the pattern dimensions in advance, subsequent processes can proceed without additional correction steps, reducing overall process complexity while maintaining high manufacturing precision
Solution Approach 2:
The patent combines the slimming process with the silicon oxide film formation process by performing them in sequence within the same film deposition apparatus. This integration reduces the number of separate processing steps and equipment transitions, thereby reducing device complexity while maintaining pattern dimension precision
2Manufacturing precision
If additional dimension correcting processes are performed, then manufacturing precision is improved, but manufacturing cost increases
Solution Approach 1:
The patent performs slimming before silicon oxide film formation, correcting pattern dimensions in advance. This preliminary correction eliminates the need for subsequent expensive correction processes, achieving high manufacturing precision while controlling manufacturing costs
Solution Approach 2:
The film deposition apparatus is utilized to perform both slimming and silicon oxide film formation. This multi-functionality reduces the need for separate specialized equipment and processes, thereby controlling manufacturing costs while maintaining high pattern dimension precision
3Manufacturing precision
If slimming is performed separately before film deposition, then manufacturing precision is improved, but dust or foreign matter may adhere to the resist pattern, worsening reliability
Solution Approach 1:
The patent performs slimming and silicon oxide film formation in sequence within the same film deposition apparatus without removing the substrate. This continuous process prevents dust or foreign matter from adhering to the resist pattern between steps, maintaining both pattern dimension precision and silicon oxide film quality
Solution Approach 2:
The patent maintains continuous processing by performing slimming followed immediately by silicon oxide film formation within the same apparatus. This continuous action eliminates interruptions where contamination could occur, ensuring both high manufacturing precision and reliability of the silicon oxide film
4Ease of operation
If the substrate is removed from the processing apparatus after slimming, then ease of operation is improved, but dust or foreign matter may adhere to the resist pattern, worsening manufacturing precision
Solution Approach 1:
The patent combines slimming and silicon oxide film formation in the same apparatus, allowing the substrate to remain in place. This approach maintains manufacturing precision by preventing contamination while still providing operational ease through automated sequential processing within a single device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves reduced manufacturing costs and improved precision in forming fine patterns with good configuration, while maintaining the purity of the resist pattern surface and enhancing the uniformity and defect density of the silicon oxide film.
Implementation Method 1
supplying a source gas and an oxygen radical or an oxygen-containing gas, thereby forming an oxide film
Implementation Method 2
forming an oxide film on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas
Implementation Method 3
slimming step and a film deposition step are continuously performed in the film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas
Data Source
AI summary
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.