Multi-Electrode Grid Structure for Stable Ion Beam Extraction

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Solution Overview

Problem

Existing semiconductor processing technologies face challenges in stably extracting an ion beam from plasma for efficient substrate processing, which can lead to poor ion beam quality and increased risk of dielectric breakdown and electrode plate fracture.

Innovation Solution

A substrate processing apparatus is designed with a grid comprising a dielectric plate and embedded electrode plates, which effectively extracts an ion beam by aligning the through hole in a straight line and reducing the probability of dielectric breakdown and electrode plate fracture.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional grid structure is used to extract ions from plasma, then ion beam extraction is achieved, but the ion beam quality is poor and the risk of dielectric breakdown and electrode plate fracture increases

Engineering Contradiction:
Improvestability of ion beam extractionVSAvoiddielectric breakdown and electrode plate fracture
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The grid structure is divided into multiple separate electrode plates (first electrode plate, second electrode plate, third electrode plate) embedded in the dielectric plate at different positions. This segmentation allows each electrode plate to be independently positioned and adjusted, distributing the electrical stress and reducing the risk of dielectric breakdown and electrode fracture while maintaining effective ion beam extraction.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Multiple electrode plates are nested within the dielectric plate structure, with each electrode plate embedded at different depths and positions. The first electrode plate is embedded at a first position, the second electrode plate at a second position, and the third electrode plate at a third position, creating a nested configuration that optimizes ion beam extraction while enhancing structural reliability.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If multiple electrode plates are embedded in the dielectric plate at different positions, then the ion beam extraction stability is improved, but the device complexity increases

Engineering Contradiction:
Improveion beam extraction stabilityVSAvoidgrid structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Multiple electrode plates are merged into a single dielectric plate structure, where the first, second, and third electrode plates are all embedded in the same dielectric plate at different positions. This merging approach integrates multiple functions into one component, achieving stable ion beam extraction without proportionally increasing overall device complexity.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables stable extraction of an ion beam, improving its quality and reducing the risk of equipment failure, while allowing for flexible adaptation to various semiconductor processes by adjusting ion beam energy.

Implementation Method 1

The ion beam source may extract ions from plasma. A grid may be used to extract ions from the plasma.

Methodology Applied
Scientific EffectIon extraction from plasma: Plasma

Implementation Method 2

a first electrode plate embedded in the dielectric plate; a second electrode plate downwardly spaced apart from the first electrode plate and embedded in the dielectric plate

Methodology Applied
Scientific EffectElectric field: Electric Field

Data Source

PatentUS20250132133A1Grid for semiconductor process
Publication Date: 2025.04.24 SAMSUNG ELECTRONICS CO LTD
  • US20250132133A1 patent drawing
  • US20250132133A1 patent drawing
  • US20250132133A1 patent drawing

AI summary

A substrate processing apparatus comprises a process chamber, a stage in the process chamber, the stage supporting a substrate, and a grid in the process chamber and upwardly spaced apart from the stage. The grid includes a dielectric plate having a central axis that extends in a first direction, a first electrode plate embedded in the dielectric plate, a second electrode plate downwardly spaced apart from the first electrode plate and embedded in the dielectric plate, and a third electrode plate downwardly spaced apart from the second electrode plate and embedded in the dielectric plate.