High-k MIM Capacitor Plasma Nitridation for Lower Leakage
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Solution Overview
Problem
Existing MIM capacitors face challenges with leakage current and reduced dielectric constant due to characteristics of high-k dielectric materials like oxygen pores, grain boundaries, and impurities.
Innovation Solution
A plasma processing method involving high-density radicals is used to treat high-k materials, forming nitrogen-containing diffusion barrier layers within the substrate stack, which reduces leakage current and maintains high dielectric constants.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-k dielectric materials are used to increase capacitance, then the dielectric constant increases, but leakage current increases due to oxygen pores, grain boundaries, and impurities
Solution Approach 1:
The patent applies preliminary plasma treatment to the high-k dielectric material before it is fully integrated into the capacitor structure. This pre-treatment modifies the material properties in advance to reduce oxygen pores, grain boundaries, and impurities, thereby preventing leakage current issues before they occur during capacitor operation
Solution Approach 2:
The patent changes the physical and chemical parameters of the high-k dielectric material through plasma processing. This includes modifying the material's density, reducing oxygen vacancy concentration, and altering grain boundary characteristics, thereby improving electrical properties while maintaining the high dielectric constant
2Quantity of substance
If the size of metal plates is increased to increase capacitance, then capacitance increases, but surface area consumption increases
Solution Approach 1:
The patent transitions from traditional planar (2D) capacitor geometry to a vertically stacked (3D) structure. By stacking multiple capacitor layers in the vertical dimension, the patent achieves higher total capacitance without increasing the horizontal surface area footprint, effectively utilizing the third dimension for capacitance enhancement
3Reliability
If plasma treatment is applied to reduce leakage current, then leakage current decreases, but processing complexity increases
Solution Approach 1:
The patent combines multiple plasma treatment steps into a single integrated processing sequence. By merging oxygen plasma treatment, nitrogen plasma treatment, and thermal annealing into one continuous process flow, the patent reduces the number of separate processing stages and simplifies overall manufacturing complexity while achieving the desired leakage current reduction
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively suppresses leakage current and increases the dielectric constant of high-k materials, enhancing the performance of MIM capacitors without the need for additional heat treatment steps.
Implementation Method 1
generating an inductively coupled plasma within the gas injection channel... The plasma includes at least one nitrogen radical species... contacting the plasma including the at least one nitrogen radical species with the high-k dielectric layer
Implementation Method 2
Processing the substrate stack within the processing chamber forms one or more nitrogen-containing diffusion barrier layers within the substrate stack
Implementation Method 3
generating an inductively coupled plasma within the gas injection channel with an induction coil positioned proximate the sidewall
Implementation Method 4
heating the substrate stack using a plurality of lamps located on a second side of the substrate stack opposite the separation grid
Implementation Method 5
Capacitors are one component in semiconductor devices... A metal-insulator-metal (MIM) capacitor has two facing metal plates... a dielectric layer placed between two electrodes... to store electric charges
Data Source
AI summary
Implementations described herein relate to systems and methods treating high-k materials for use in forming MIM capacitors. Including various high-density plasma nitridation processes or combinations of high-density plasma oxidation processes and high-density plasma nitridation processes are provided.