Semiconductor Device With Anode Extension For Carrier Discharge
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Solution Overview
Problem
Existing semiconductor devices face challenges in simultaneously reducing ON-voltage and switching loss, as increasing carrier concentration to lower ON-voltage often increases switching loss, and vice versa.
Innovation Solution
The semiconductor device incorporates a p-type semiconductor layer selectively provided inside an n-type semiconductor layer, with an extension portion of the anode electrode piercing the p-type anode layer and extending towards the cathode electrode, facilitating quick electron and hole discharge, thereby reducing carrier concentration and switching loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If carrier concentration is increased to reduce ON-voltage, then ON-voltage is reduced, but time to remove carriers increases
Solution Approach 1:
By segmenting the semiconductor structure with localized p-type layers rather than uniform high carrier concentration, the patent enables faster carrier removal. The segmented structure with extension portions creates multiple discharge pathways, reducing the time required to remove carriers compared to a uniformly doped structure with the same overall carrier concentration.
Solution Approach 2:
The extension portion of the anode electrode is positioned in advance to facilitate rapid carrier discharge. This preliminary structural arrangement ensures that when switching off is required, carriers can be quickly removed through the pre-positioned extension portions, reducing carrier removal time while maintaining the benefits of localized high carrier concentration for low ON-voltage.
2Loss of energy
If extension portion is added to pierce p-type anode layer, then carrier discharge is improved, but device complexity increases
Solution Approach 1:
The extension portion of the anode electrode serves multiple functions simultaneously: it provides mechanical support, establishes electrical connection, and facilitates rapid carrier discharge by piercing the p-type anode layer. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in device complexity while achieving improved switching loss through enhanced carrier discharge.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for reduced ON-voltage and switching loss by promoting rapid carrier discharge, improving avalanche resistance and achieving desired ON-voltage and switching characteristics.
Implementation Method 1
The extension portion pierces the p-type anode layer, extends in a first direction toward the second electrode, and is connected to the third semiconductor layer
Data Source
AI summary
A semiconductor device includes a first electrode, a second electrode disposed at a position opposing the first electrode, and a semiconductor body provided between the first electrode and the second electrode. The semiconductor body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a third semiconductor layer of the second conductivity type; the second semiconductor layer is provided between the first semiconductor layer and the first electrode; and the third semiconductor layer is selectively provided inside the first semiconductor layer and disposed at a position separated from the second semiconductor layer. The first electrode is electrically connected to the second semiconductor layer and includes an extension portion; and the extension portion pierces the second semiconductor layer, extends in a first direction toward the second electrode, and is connected to the third semiconductor layer.