Antenna Switch Circuit With Segmented Transistor Groups

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Solution Overview

Problem

Antenna switch circuits face challenges in supporting multiple frequency bands while maintaining optimal characteristics such as ON-resistance, OFF-capacitance, and withstand voltage, which vary with signal frequencies, necessitating a solution for improved compatibility and performance across different frequency bands.

Innovation Solution

A semiconductor device and antenna switch circuit design featuring multiple transistor groups with different ON-resistances and power levels, connected in series, to selectively manage signal transmission and reception across various frequency bands, with each group optimized for specific frequency band requirements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a single transistor configuration is used in the antenna switch circuit, then the device complexity is reduced, but the compatibility across multiple frequency bands deteriorates due to varying ON-resistance, OFF-capacitance, and withstand voltage characteristics

Engineering Contradiction:
Improvemultiple band supportVSAvoidtransistor group configuration
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The antenna switch circuit is divided into multiple transistor groups (first transistor group and second transistor group), each optimized for specific frequency bands. This segmentation allows each group to handle particular frequency ranges with optimized characteristics, thereby achieving multiple band support while managing complexity through functional division.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different transistor groups are assigned different ON-resistance values and other characteristics tailored to specific frequency band requirements. The first transistor group has ON-resistance optimized for lower frequency bands, while the second transistor group has ON-resistance optimized for higher frequency bands, achieving local optimization for each frequency range.

Inventive Principle:
Principle #3Local quality

2Loss of energy

If transistors with low ON-resistance are used to improve signal transmission, then the insertion loss is reduced, but the withstand voltage capability deteriorates

Engineering Contradiction:
Improveinsertion lossVSAvoidwithstand voltage
Core Design Contradiction:
Loss of energyVSStrength

Solution Approach 1:

The patent applies parameter changes by configuring different ON-resistance values for different transistor groups based on their assigned frequency bands. The first transistor group uses parameters optimized for low insertion loss in lower frequency bands, while the second transistor group uses parameters optimized for withstanding higher voltages in higher frequency bands, thereby resolving the contradiction through parameter optimization.

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If multiple transistor groups with different characteristics are introduced to support multiple bands, then the frequency band compatibility is improved, but the device complexity increases

Engineering Contradiction:
Improvefrequency band compatibilityVSAvoidswitching control mechanism
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The antenna switch circuit implements dynamic switching between different transistor groups based on the operating frequency band. The switching control unit dynamically selects which transistor group to activate, allowing the circuit to adapt its characteristics to match the required frequency band, thereby achieving frequency band compatibility through dynamic reconfiguration.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS11211966B2Semiconductor device, antenna switch circuit, module device, and wireless communication device
Publication Date: 2021.12.28 SONY GROUP CORP
  • US11211966B2 patent drawing
  • US11211966B2 patent drawing
  • US11211966B2 patent drawing

AI summary

To realize multiple band support in wireless communication in a more favorable manner. A semiconductor device including: a plurality of terminals; and a plurality of transistor groups provided for each of the terminals, in which a plurality of transistors are connected in series in each group. The plurality of transistor groups have different ON-resistances from each other and receive inputs of signals having different power levels from each other.