Anti-Oxidation Layer for CMP Coplanarity in Conductive Features
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Solution Overview
Problem
During semiconductor device fabrication, conductive structures are prone to oxidation during cleaning and drying processes, leading to the formation of oxide residues that can disrupt the coplanarity of conductive and dielectric layers, causing structural issues in the semiconductor device.
Innovation Solution
A method involving the formation of an anti-oxidation layer comprising a reducing agent and an inhibitor on the conductive structure after planarization, which prevents oxidation and is later removed using a less harsh dry cleaning process to maintain the coplanarity of conductive and dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning and drying processes are used after planarization, then the conductive structure is cleaned effectively, but oxidation occurs forming oxide residues that disrupt coplanarity
Solution Approach 1:
An anti-oxidation layer is introduced as an intermediary substance between the conductive structure and the oxidizing environment during cleaning and drying processes. This layer prevents direct contact between oxygen and the conductive material, thereby preventing oxide residue formation while allowing the cleaning process to proceed effectively.
Solution Approach 2:
The anti-oxidation layer is formed on the conductive structure before the cleaning and drying processes begin. This preliminary protective action ensures that the conductive structure is already protected against oxidation before exposure to potentially harmful environments, preventing oxide residue formation in advance.
2Reliability
If harsh cleaning processes are used to remove oxide residues, then oxidation products are removed, but the coplanarity of conductive and dielectric layers is compromised
Solution Approach 1:
The oxidation that would normally create harmful oxide residues is converted into a beneficial process by forming the anti-oxidation layer first. This layer then prevents further oxidation during cleaning, and any initial oxidation that occurs can be gently removed without compromising the underlying conductive structure or dielectric layer coplanarity.
Solution Approach 2:
The cleaning process parameters are changed from harsh to less harsh conditions by using the anti-oxidation layer protection. Instead of requiring aggressive cleaning methods to remove oxide residues, the modified approach uses milder cleaning parameters that preserve the coplanarity of conductive and dielectric layers while still achieving effective cleaning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents oxidation of conductive structures, ensuring the structural integrity of semiconductor devices by maintaining the coplanarity of conductive and dielectric layers, thereby improving the reliability of the fabrication process.
Implementation Method 1
conductive structures are prone to oxidation during cleaning and drying processes, leading to the formation of oxide residues
Implementation Method 2
forming an anti-oxidation layer comprising a reducing agent and an inhibitor on the conductive structure after planarization
Data Source
AI summary
In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.