Antifuse Dielectric Layer Diffusion for Low Voltage Operation
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Solution Overview
Problem
Conventional antifuses require a high programming voltage of at least 5 V, leading to increased off leakage current and decreased reliability of transistors due to higher power consumption.
Innovation Solution
An antifuse design incorporating a dielectric layer with a material like Al oxide or Si nitride and a diffusion layer of Cr, which reduces the energy band gap and increases the dielectric constant, allowing for lower programming voltages by diffusing the diffusion layer into the dielectric layer and sequentially stacking it with a gate conductive layer, cathode, and anode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional antifuse uses a high programming voltage of at least 5 V, then the antifuse can be programmed, but the off leakage current of transistors increases and reliability decreases
Solution Approach 1:
The patent changes the physical and chemical parameters of the dielectric layer by forming a composite structure with multiple dielectric materials having different energy band gaps and dielectric constants. This modification allows the antifuse to operate at lower programming voltages (reducing power consumption and leakage current) while maintaining reliable breakdown characteristics for proper programming function.
Solution Approach 2:
The patent employs a composite dielectric layer consisting of multiple dielectric materials (such as Al oxide, Si oxide, Si nitride, and Cr oxide) with different properties. This composite structure enables the system to achieve both low operating voltage (reducing power consumption and leakage) and high reliability (through controlled breakdown characteristics) by combining materials with complementary properties.
2Power
If a conventional antifuse uses a high programming voltage of at least 5 V, then the antifuse can be programmed, but the power consumption increases
Solution Approach 1:
The patent modifies the electrical parameters of the dielectric layer by using a composite structure with materials having different dielectric constants and energy band gaps. This enables the antifuse to function at lower programming voltages, directly reducing power consumption while maintaining the necessary breakdown characteristics for reliable programming operation.
Solution Approach 2:
The composite dielectric layer combining materials with different electrical properties allows the system to reduce operating voltage (and thus power consumption) while maintaining reliable breakdown behavior. The combination of materials with complementary characteristics enables low-power operation without sacrificing programming functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The antifuse operates with reduced leakage current and increased transistor reliability by lowering the programming voltage, thus reducing power consumption and improving overall device performance.
Implementation Method 1
The diffusion layer may include a material diffused into the dielectric layer, the material reducing the energy band gap of the dielectric layer and/or increases a dielectric constant of the dielectric layer
Implementation Method 2
the material reducing the energy band gap of the dielectric layer and/or increases a dielectric constant of the dielectric layer
Data Source
AI summary
Provided are an antifuse and methods of operating and manufacturing the same. The antifuse may include first and second conductors separate from each other; a dielectric layer for an antifuse between the first and second conductors; and a diffusion layer between one of the first and second conductors and the dielectric layer.