Anti-Fuse Memory Cell State Detection Circuit
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Solution Overview
Problem
Existing methods for detecting the state of anti-fuse memory cells are inaccurate due to resistance fluctuations and limitations in detection circuits, leading to decreased chip yield.
Innovation Solution
A circuit comprising a current providing module, an anti-fuse memory cell array, and a comparator is used to detect the state of anti-fuse memory cells by applying a constant current and comparing the resulting voltage with a reference voltage, thereby accurately determining the storage state.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional detection circuits are used to detect anti-fuse memory cell state, then the detection process is simple, but the detection accuracy is low due to resistance fluctuations
Solution Approach 1:
The patent introduces a current providing module as an intermediary component that supplies constant current to the anti-fuse memory cell during detection. This mediator stabilizes the detection conditions by eliminating current fluctuations, thereby improving detection accuracy without significantly complicating the overall circuit structure
Solution Approach 2:
The patent changes the detection parameter from voltage-based detection to current-based detection. By using a constant current source and measuring the voltage drop across the anti-fuse memory cell, the detection method becomes more accurate as it directly reflects the resistance state of the cell without being affected by supply voltage fluctuations
2Reliability
If conventional detection methods are used, then the detection circuit is simple, but false determinations occur leading to decreased chip yield
Solution Approach 1:
The comparator acts as an intermediary that compares the detected voltage against a reference voltage threshold. This intermediary component eliminates false determinations by providing a clear decision boundary, ensuring reliable detection results and improving chip yield through accurate pass/fail determination
Solution Approach 2:
The patent implements a feedback mechanism where the detection result is compared against a reference voltage, and the comparator output provides feedback on the actual state of the anti-fuse memory cell. This feedback loop ensures accurate detection by continuously verifying the cell state against known good/bad thresholds
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances detection accuracy by reducing false determinations and maintaining consistent chip performance, improving the reliability of anti-fuse memory cell state detection.
Implementation Method 1
a current providing module connected to a first node and used to provide constant current
Implementation Method 2
a comparator, herein a first input end of the comparator is connected to the first node, a second input end of the comparator is connected to a first reference voltage
Data Source
AI summary
A circuit for detecting an anti-fuse memory cell state includes a current providing module connected to a first node and used to provide constant current; an anti-fuse memory cell array connected to the first node and including at least one bit line, the at least one bit line is connected to a plurality of anti-fuse memory cells and the first node; and a comparator, a first input end of the comparator is connected to the first node and a second input end of the comparator is connected to a first reference voltage, and used to detect a storage state of an anti-fuse memory cell to be tested in the anti-fuse memory cell array.