Configurable Logic Devices Using Antifuse and TSV

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Solution Overview

Problem

The increasing cost of mask sets and limited flexibility in semiconductor fabrication, particularly for custom products, due to the need for multiple expensive mask sets to accommodate various designs and higher data transfer rates, lead to high development costs and inefficient use of silicon area in FPGA devices.

Innovation Solution

The use of re-programmable antifuse technology in conjunction with Through Silicon Via (TSV) to construct configurable logic devices, allowing for the creation of modular systems with improved silicon area utilization and reduced mask costs, by employing transistors above or below antifuse configurable interconnect circuits, and integrating memory and I/O functions within the device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple custom mask sets are used to accommodate various designs, then design flexibility is improved, but manufacturing cost increases exponentially

Engineering Contradiction:
Improvedesign flexibilityVSAvoidmanufacturing cost
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent implements a universal master slice structure that can be configured through programming to perform multiple different logic functions. This single reconfigurable structure replaces the need for multiple custom mask sets, allowing the same physical hardware to adapt to different design requirements through software configuration rather than physical remanufacturing

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The invention introduces dynamic reconfigurability where the logic array can be programmed and reprogrammed at different times (e.g., configuration memory loaded during system initialization). This dynamic adaptation allows the device to change its functionality without physical modification, resolving the contradiction between design flexibility and manufacturing cost

Inventive Principle:
Principle #15Dynamics

2Adaptability or versatility

If dedicated mask sets are created for each custom product, then product customization is improved, but development time increases

Engineering Contradiction:
Improveproduct customizationVSAvoiddevelopment time
Core Design Contradiction:
Adaptability or versatilityVSLoss of time

Solution Approach 1:

The patent pre-configures a standard logic array structure with all necessary interconnect elements and master slices before deployment. This preliminary structuring allows rapid customization through programming rather than time-consuming mask fabrication and physical assembly, significantly reducing development time while maintaining customization capability

Inventive Principle:
Principle #10Preliminary action

3Ease of manufacture

If generic Master Slice structures are used across multiple products, then manufacturing cost is reduced, but adaptability to specific designs decreases

Engineering Contradiction:
Improvemanufacturing costVSAvoiddesign fit
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The patent allows different regions or slices of the logic array to be configured with different parameters (such as different numbers of inputs, different logic functions, different interconnect patterns). This local configurability enables each master slice to be optimized for specific design requirements while using the same generic physical structure, achieving both cost efficiency and design adaptability

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS8237228B2System comprising a semiconductor device and structure
Publication Date: 2012.08.07 SAMSUNG ELECTRONICS CO LTD
  • US8237228B2 patent drawing
  • US8237228B2 patent drawing
  • US8237228B2 patent drawing

AI summary

A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.