Anti-Reflection Layer for Uniform Thin Film Resistor Profiles

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Solution Overview

Problem

Conventional methods for manufacturing thin film resistor patterns in semiconductor devices often result in nonuniform profiles due to light reflection from underlying metal patterns, leading to inconsistent resistance values.

Innovation Solution

Incorporating an anti-reflection layer between the thin film resistor pattern and the metal patterns to prevent light reflection during the photoresist exposure process, ensuring a uniform and regular profile of the thin film resistor pattern.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a thin film resistor pattern is formed directly over metal patterns without an anti-reflection layer, then the manufacturing process is simpler, but the thin film resistor pattern exhibits nonuniform profile and width due to light reflection during exposure

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidthin film resistor pattern uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

An anti-reflection layer is introduced as an intermediary component between the thin film resistor pattern and the metal patterns. This layer prevents light reflection during the exposure process, thereby eliminating the nonuniform profile and width issues in the thin film resistor pattern while maintaining manufacturing feasibility

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the thin film resistor material is made thinner to reduce parasitic effects, then the device performance improves, but light transmission increases causing more severe reflection from underlying metal patterns

Engineering Contradiction:
Improvedevice performanceVSAvoidlight reflection during exposure
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The anti-reflection layer converts the harmful light reflection effect into a beneficial outcome by absorbing or blocking the reflected light, thereby preventing profile deformation. This allows the thin film resistor material to be made thinner for improved device performance without suffering from the adverse reflection effects

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Device complexity

If no anti-reflection layer is used, then the device structure is simpler, but the resistance value deviates from the desired design due to profile deformation

Engineering Contradiction:
Improvestructure complexityVSAvoidresistance value accuracy
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The anti-reflection layer acts as an optical buffer that controls light interaction during exposure, ensuring that the thin film resistor pattern achieves the desired profile and resistance value. This additional layer, while increasing structural complexity, is necessary to achieve precise resistance control matching the design specifications

Inventive Principle:
Principle #29Pneumatics and hydraulics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The anti-reflection layer allows for the formation of thin film resistor patterns with consistent profiles and stable resistance characteristics, reducing mismatches and achieving desired resistance values.

Implementation Method 1

an anti-reflection layer between the thin film resistor pattern and the metal patterns

Methodology Applied
Scientific EffectLight reflection prevention: Anti-Reflective Coating

Data Source

PatentUS8796104B2Semiconductor device and method of manufacturing the same
Publication Date: 2014.08.05 DONGBU HITEK CO LTD
  • US8796104B2 patent drawing
  • US8796104B2 patent drawing
  • US8796104B2 patent drawing

AI summary

A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first insulation layer on or over a semiconductor substrate, metal patterns on or over the first insulation layer, a thin film resistor pattern disposed on or over the metal patterns, and an anti-reflection layer between the thin film resistor pattern and the metal patterns.