Arc Ion Plating Apparatus Bombardment Source Design
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Solution Overview
Problem
Arc ion plating apparatuses face challenges with over-temperature rise and abnormal discharge during metal ion bombardment, leading to poor process controllability and reduced productivity, especially when using low-melting point metals and small-diameter substrates.
Innovation Solution
The apparatus features a longer arc evaporation source for bombardment compared to deposition, with a rectangular shape and an electromagnetic coil for uniform ion supply, reducing metal ion irradiation quantity and heat input, and an evaporation source area larger than deposition sources to minimize overheating and abnormal discharges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the arc evaporation source for bombardment has the same dimensions as the deposition source, then the apparatus structure is simpler, but the metal ion irradiation quantity is excessive causing over-temperature rise and abnormal discharge
Solution Approach 1:
The patent applies local quality by making the arc evaporation source for bombardment have different dimensions (specifically longer in the height direction) compared to the deposition sources. This localized structural differentiation allows the bombardment source to provide sufficient metal ion irradiation area without excessive ion quantity per unit area, thereby preventing over-temperature rise and abnormal discharge while maintaining effective bombardment coverage.
2Reliability
If the arc current is increased to ensure stable arc discharge, then the arc discharge stability is improved, but the heat input to substrate increases causing over-temperature rise
Solution Approach 1:
The patent applies parameter changes by modifying the geometric parameters of the arc evaporation source for bombardment, specifically increasing its length in the height direction. This structural parameter change allows the system to maintain stable arc discharge with lower arc current by providing a larger evaporation area, thereby reducing the heat input to the substrate and preventing over-temperature rise while ensuring reliable arc operation.
3Manufacturing precision
If the bombardment time is extended to improve film adhesion, then the adhesion quality is improved, but the productivity is reduced due to frequent abnormal discharge interruptions
Solution Approach 1:
The patent converts the potential harm of excessive metal ion irradiation (which causes abnormal discharge) into a benefit by designing the arc evaporation source for bombardment with extended length in the height direction. This structural modification distributes the ion irradiation more evenly, reducing localized excessive irradiation that causes abnormal discharge, thereby enabling longer bombardment times for improved adhesion without productivity loss from frequent interruptions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces overheating and abnormal discharges, enhancing process controllability and productivity by lowering metal ion irradiation and heat input, while maintaining stable arc discharge, and preventing cutting edge softening in small-diameter substrates.
Implementation Method 1
an arc evaporation source for bombardment provided within the vacuum chamber for irradiating metal ions evaporated by arc discharge with the surface of the substrate to clean the surface
Implementation Method 2
arc evaporation sources for deposition provided within the vacuum chamber for depositing metal ions evaporated by arc discharge on the surface of the substrate
Implementation Method 3
with a rectangular shape and an electromagnetic coil for uniform ion supply
Data Source
AI summary
An arc ion plating apparatus comprises a vacuum chamber, a rotary table for moving a substrate within the vacuum chamber vertically relative to its height direction, an arc evaporation source for bombardment for cleaning the surface of the substrate with metal ions, and an arc evaporation source for deposition group for depositing metal ions on the surface of the substrate. The arc evaporation source for deposition group is composed of a plurality of evaporation sources arranged so as to be opposite to the substrate set on the rotary table, and the arc evaporation source for bombardment is arranged so as to be opposite to the substrate, and formed so that its length in the height direction of the vacuum chamber is equal to the length between the upper and lower ends of the arc evaporation source for deposition group. According to such a structure, over temperature rise or abnormal discharge is hardly caused in the substrate at the time of bombardment, and process controllability is consequently enhanced.