Electric Discharge Tubes TRIZ Cases

A transporter mechanism repositions a shunt between adjacent magnets to tune erosion uniformity without halting production.

A stacked electrode structure applies separate DC pulses to substrate rods and plates for uniform potential distribution.

Thinning liquid into a film maximizes plasma penetration, producing high concentrations of activated species in large volumes.

Adjusting electrode impedance via variable capacitors improves center-to-edge thickness uniformity and film stress control.

Pulsed DC voltage lowers dielectric impedance to maintain ion attraction while minimizing particle emission from extraction plates and shields.

A method introduces coma aberration to determine the objective lens optical axis position on the detector plane for precise alignment.

Thermal ALD forms a SiN protective layer that blocks plasma exposure to the SiCN seed layer, preventing carbon loss and maintaining film quality.

A stage device uses a thermal bypass member to conduct heat from the linear motor coil.

A multi charged particle beam writing apparatus calculates distribution coefficients to redistribute dose among healthy beams when defective beams are detected.

A cover part with a shielding portion directs processing gas parallel to the substrate surface within the internal space.

Segmented shower head passages with slanted walls enable rapid purging, preventing residual gas degradation during film formation.

Segmenting the chamber into distinct zones manages gas delivery to improve uniformity while preventing unwanted deposition on reactor walls.

Blasting textured sputter targets with sublimable ice particles removes contaminants and cantilevered structures to create a clean deposition surface.

Deformable deflection portions in the wiring member absorb connection position deviations caused by battery dimensional tolerances.

Real-time optical feedback correlates lateral recess and etched thickness, reducing out-of-spec devices during stepped structure formation.

A cold field-emission electron source in a scanning electron microscope uses combined ion and non-evaporable getter pumps.

An optical spectrometer measures plasma gas dissociation degrees via absorption spectroscopy.

A rotating jaw assembly secures meter sockets to base members through mechanical engagement.

Classifier filters topographical, intensity, and energy attributes to identify non-visual defects, reducing manual classification time.

An ion suppression screen blocks molecular oxygen interference, enabling precise real-time atomic oxygen detection.

Dual subtractive etching with oxygen-chlorine gas mixtures achieves high selectivity while preventing underlying layer oxidation during nanoscale patterning.

Electro-static shields capture motor contaminants to maintain vacuum purity while modular designs allow probe replacement without chamber venting.

Plasma oxidation creates a stable silicon oxide barrier that prevents reoxidation and reduces interface resistance during graphene film formation.

Chlorination-based atomic layer etching improves etch rates and selectivity for metal oxides without damaging fluorine-sensitive materials.

A monolithic L-shaped plasma confinement ring surrounds a substrate support assembly and extends perpendicularly to define the processing volume.

Segmented bore geometry prevents unwanted plasma ignition in energized upper electrodes by blocking electric field exposure along the gas flow path.

UV radiation applied locally to masked silicon substrates improves etching precision while reducing surface damage.

Selective yttrium oxide coating on side and bottom faces suppresses particle generation from fractured surfaces without compromising attraction force stability.

Segmented housing voltages remove plasma particles, resolving the contradiction between film deposition speed and durability.

Observation assist screen displays electron dose per pixel to resolve trial-and-error setting of optimal image quality conditions.

Water retention material covers the specimen area to maintain hydration while the chamber evacuates, preventing drying and freezing.

A control unit alters the DC voltage supplied to an RF amplifier to maintain a target output power setpoint.

Segmented exhaust ports direct radicals away from the etched surface to prevent material damage during high aspect ratio processing.

A thermocouple integrates metal parts and wire extensions inside an electrostatic chuck base to generate thermal electromotive force.

A result display area placement mechanism assigns measurement data to designated screen regions for immediate processing.

Synchronized DC voltage applied to the edge ring prevents tilting and maintains roundness of etching shapes at wafer edges.

Atmospheric plasma removes polishing residues and contaminants from semiconductor substrates without mechanical damage.

Optical heating removes contaminant buildup from narrow gaps between inner and outer focus rings without chamber venting.

Alternating high bias deposition with lower bias etching protects sidewalls while increasing etch rates.

Segmented getter sheets use distance flaps and spring-back retention to ensure homogeneous heating, resolving vacuum stability challenges.

A conductive knitted wire mesh connects a radio frequency power supply to an electrode in a semiconductor manufacturing chamber.

Dynamic target coverage during sputtering creates vertical composition gradients, resolving uniformity constraints in thin film manufacturing.

A method adjusts ion beam electron addition using light reflectivity measurements to control surface charge potential.

Segmented gas outlets and alignment pin recesses in the showerhead electrode improve etching uniformity while reducing thermal stress.

Segmented chambers with an intermediary screen decouple pressure zones, enabling stable beam operation while reducing system complexity.

A charged particle beam apparatus calculates required imaging time and estimates remaining filament life to enable timely replacement.

A multiple arc chamber ion source uses a carrousel to position specialized chambers for selective ion beam generation.

Heat transfer gas flow adjusts wafer temperature and pressure against the electrostatic chuck, eliminating thermal expansion sliding that generates particles.

A longer arc evaporation source for bombardment reduces metal ion irradiation quantity and heat input on the substrate.