Atomic Oxygen Sensor with Ion Suppression Screen
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional methods for detecting atomic oxygen in semiconductor processing chambers are inadequate due to interference from molecular oxygen and oxygen ions, and they lack the precision and speed required for real-time characterization in heterogeneous plasma environments.
Innovation Solution
The use of an atomic oxygen sensor positioned within the semiconductor processing chamber, featuring a metallic gold electrode and a yttria-stabilized zirconia ceramic electrolyte, which selectively detects atomic oxygen and reduces ion flux, allowing for in-situ, real-time measurements without the need for large chemical instrumentation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional detection methods are used, then device fabrication can proceed, but measurement precision of atomic oxygen levels is insufficient due to interference from molecular oxygen and oxygen ions
Solution Approach 1:
The patent employs an ion suppression screen as an intermediary component that selectively blocks oxygen ions from reaching the sensor while permitting atomic oxygen detection. This mediator resolves the contradiction by filtering out harmful ion interference without affecting the measurement of target atomic oxygen species
Solution Approach 2:
The sensor system implements local quality differentiation through specialized electrode materials and ion suppression mechanisms positioned at specific locations within the chamber. The ion suppression screen creates a localized protective zone around the sensor, providing selective filtering exactly where needed to eliminate interference while maintaining measurement precision
2Productivity
If real-time atomic oxygen detection is implemented, then plasma processing can be optimized, but device complexity increases due to additional sensor components
Solution Approach 1:
The patent extracts and isolates the critical detection function from complex chemical instrumentation by using a simplified sensor design with gold electrodes and ion suppression screen. This extraction allows real-time atomic oxygen detection to be implemented without requiring large, complex analytical equipment, thus maintaining productivity while managing device complexity
Solution Approach 2:
The sensor system utilizes parameter changes in material properties, specifically the selective permeability and ion-blocking characteristics of the ion suppression screen, to achieve real-time detection capability. By changing the physical and chemical parameters of the sensor components, the system enables continuous monitoring without proportionally increasing overall device complexity
3Reliability
If ion flux is reduced to protect the sensor, then sensor reliability improves, but detection sensitivity may be compromised
Solution Approach 1:
The ion suppression screen acts as a selective intermediary that differentiates between harmful ions and target atomic oxygen species. It provides reliable sensor operation by blocking ions while maintaining detection sensitivity through its selective permeability properties, resolving the contradiction between protection and sensitivity
Solution Approach 2:
The sensor system employs composite material structures, including the ion suppression screen positioned between the plasma environment and sensor electrodes. This composite approach combines materials with different properties to achieve both ion protection and atomic oxygen detection sensitivity simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate and precise detection of atomic oxygen levels, improving the characterization of plasma dynamics and enabling timely adjustments in semiconductor processing operations, thereby enhancing the quality and precision of device fabrication.
Implementation Method 1
the atomic oxygen sensor may include a solid electrolyte that selectively conducts atomic oxygen ions
Implementation Method 2
the atomic oxygen sensor may include at least one electrode made of metallic gold
Implementation Method 3
the atomic oxygen sensor may be surrounded by an ion suppression screen that reduces the flux of ions contacting the sensor
Data Source
AI summary
Semiconductor processing systems are described to measure levels of atomic oxygen using an atomic oxygen sensor positioned within a substrate processing region of a substrate processing chamber. The processing systems may include a semiconductor chamber that has a chamber body which defines a substrate processing region. The processing chamber may also include a substrate support positioned within the substrate processing region. The atomic oxygen sensor may be positioned proximate to the substrate support in the substrate processing region of the chamber. Also described are semiconductor processing methods that include detecting a concentration of atomic oxygen in the substrate processing region with an atomic oxygen sensor positioned in the semiconductor processing chamber. The atomic oxygen sensor may include at least one electrode comprising a material selectively permeable to atomic oxygen over molecular oxygen, and may further include a solid electrolyte that selectively conducts atomic oxygen ions.