Aromatic Hydrocarbon Resin Underlayer Film for Lithography

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Solution Overview

Problem

Current aromatic hydrocarbon resins used in semiconductor manufacturing face challenges such as high cost, complex reaction processes, and limitations in miniaturization due to low carbon and high oxygen concentrations, which affect their heat resistance and etching resistance, especially when used as underlayer films in lithography processes.

Innovation Solution

Aromatic hydrocarbon resin synthesized by reacting an aromatic hydrocarbon with an aldehyde in the presence of an acidic catalyst, resulting in a high carbon and low oxygen composition, suitable for use as an underlayer film in lithography, providing enhanced etching resistance and heat resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional aromatic hydrocarbon resins are used to improve heat resistance, then heat resistance is enhanced, but etching resistance deteriorates due to low carbon and high oxygen concentrations

Engineering Contradiction:
Improveheat resistanceVSAvoidetching resistance
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent changes the chemical composition parameters of the resin by introducing a specific aromatic hydrocarbon component with formula (1) where R represents hydrogen or alkyl groups, l and m represent numbers from 1 to 3, and A represents 0 to 2. This structural modification increases carbon concentration and decreases oxygen concentration, simultaneously improving both heat resistance and etching resistance properties

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite resin system combining the novel aromatic hydrocarbon component with conventional resin components. This composite approach allows the resin to achieve both high heat resistance and high etching resistance by integrating the specific aromatic structure with other functional components in the resin composition

Inventive Principle:
Principle #40Composite materials

2Temperature

If acenaphthene resin is used to increase carbon concentration and decrease oxygen concentration, then heat resistance is improved, but manufacturing complexity increases due to severe reaction conditions and multiple reaction steps

Engineering Contradiction:
Improveheat resistanceVSAvoidreaction process complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent extracts the essential functional feature (aromatic hydrocarbon structure with specific formula) from the complex acenaphthene resin system. By identifying and isolating the key structural elements responsible for heat resistance, the patent simplifies the manufacturing process while maintaining the desired performance characteristics

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent modifies the reaction parameters and structural formula of the aromatic hydrocarbon component to achieve the desired carbon concentration and oxygen concentration ratios. By optimizing the parameters in formula (1) and the synthesis conditions, the patent attains high heat resistance through a simplified single-stage reaction process

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If resist thickness is reduced to prevent pattern collapse in miniaturization, then resolution is improved, but insufficient etching resistance occurs

Engineering Contradiction:
Improvepattern resolutionVSAvoidetching resistance
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the chemical composition parameters of the underlayer film by incorporating the novel aromatic hydrocarbon resin, which increases carbon concentration and decreases oxygen concentration. This compositional modification enhances etching resistance, allowing the use of thinner underlayer films that prevent resist pattern collapse while maintaining sufficient etching protection

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resulting resin offers improved etching resistance and heat resistance, enabling better performance in semiconductor manufacturing processes, particularly in the formation of multilayer resist patterns and as a coating material for semiconductor devices.

Implementation Method 1

a composition for forming an underlayer film for lithography that is effective in a multilayer resist process... having a high carbon concentration and a low oxygen concentration... excellent in etching resistance

Methodology Applied
Scientific EffectEtching resistance:

Implementation Method 2

heat resistance as one of the capabilities of these purposes... the heat resistance is enhanced by increasing the carbon concentration in the resin

Methodology Applied
Scientific EffectHeat resistance:

Data Source

PatentUS8586289B2Aromatic hydrocarbon resin and composition for forming underlayer film for lithography
Publication Date: 2013.11.19 MITSUBISHI GAS CHEM CO INC
  • US8586289B2 patent drawing
  • US8586289B2 patent drawing
  • US8586289B2 patent drawing

AI summary

The aromatic hydrocarbon resin can be used as a coating material and a resist resin for a semiconductor, and has a high carbon concentration and a low oxygen concentration. A composition for forming an underlayer film for lithography that has excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed with the same, and a pattern forming method using the same are disclosed. An aromatic hydrocarbon is reacted with an aromatic aldehyde in the presence of an acidic catalyst, thereby providing an aromatic hydrocarbon resin that has a high carbon concentration of from 90 to 99.9% by mass and a low oxygen concentration of from 0 to 5% by mass. A composition for forming an underlayer film for lithography contains the resin and an organic solvent, an underlayer film is formed with the same, and a pattern forming method uses the same.