Photosensitive Materials TRIZ Cases

Composite resin system prevents pattern collapse in thick films while maintaining rectangular formability for sub-400 nm manufacturing precision.

High molecular weight aryl-substituted onium cations minimize corrosive sulfur compound outgassing that damages EUV lithography optics.

UV curing eliminates high-temperature processing that volatilizes low molecular mass components, preventing contamination of peripheral devices.

A positive resist composition uses a hydroxystyrene copolymer with protected groups to achieve high resolution.

Self-propagating polymer waveguides bypass layer-by-layer stereolithography to produce large-scale ordered 3D structures.

A photo-curing polysiloxane composition controls molecular weight distribution to form a uniform protective film.

A substrate treatment apparatus supplies solvent gas to a center portion of the substrate while exhausting from the periphery.

A crosslinkable negative resist composition enables high resolution pattern formation through controlled polymer crosslinking reactions.

A photosensitive resin composition uses a basic compound to control photospeed and enhance shelf life.

A hardmask composition comprising an organosilane polymer and solvent provides high etch selectivity and solvent resistance.

Applying a hydrophobizing agent reduces rinse solution surface tension, preventing pattern collapse in high-aspect-ratio semiconductor structures.

Base-reactive groups alter photoresist surface finish to reduce blob defects.

Lactone-based ArF resin compositions reduce development defects and improve line edge roughness by increasing solubility in alkali developers.

A resist composition uses a composite resin system to achieve wide focus margin.

A chemically amplified positive resist composition forms a pattern that becomes insoluble in organic solvents after heating.

A positive resist composition uses specific resin units and an onium salt acid generator to form patterns with reduced roughness.

A resist composition uses specific resin units and acid generators to enhance pattern quality.

A polymeric quencher migrates to the photoresist surface through diffusion, enriching the layer with concentrated material.

Oxidizing a calixarene compound in an oxygen-rich atmosphere forms a resist underlayer film that prevents pattern deformation and improves etching resistance.

A radiation-sensitive resin composition uses a dual-polymer structure with an acid generator to form resist patterns.

Hydrophobic polymer additives segregate at resist surfaces to prevent water penetration and blob defects during high-speed scanning.

A radiation-sensitive resin composition utilizes specific repeating units and an acid generator to achieve high sensitivity.

A resist surface modifying liquid containing acidic compounds and alcohol-based solvents treats films before post-exposure baking.

Smooth polypropylene surfaces suppress unevenness transfer to the photosensitive layer, resolving air bubble defects in thin resist pattern manufacturing.

A photoresist composition uses a specific polymeric compound and acid generator to form precise patterns.

A radiation-sensitive resin composition incorporates a specific compound to control acid diffusion and improve resolution.

High-carbon aromatic hydrocarbon resin enhances etching resistance in multilayer resist processes by reducing oxygen content.

A segmented polymer coating suppresses exposure light reflection at high numerical apertures while maintaining dry etching rates.

An NIR absorbing film eliminates focus determination errors from reflective structures by blocking interfering radiation during semiconductor wafer patterning.

A resist pattern-insolubilizing resin composition stabilizes first-layer patterns during multi-step lithography processes.