Substrate Treatment Apparatus for Resist Pattern Smoothing
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Solution Overview
Problem
Existing substrate treatment apparatuses face challenges in achieving uniformity in solvent distribution and solvent concentration across the wafer, leading to uneven smoothing of resist patterns, which can result in pattern dissolution and reduced yield during semiconductor manufacturing.
Innovation Solution
A substrate treatment method involving repeated cycles of solvent gas supply to the center or periphery of the substrate, accompanied by drying gas exhaust from the opposite regions, to control solvent concentration and prevent excessive permeation, ensuring uniform surface smoothing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a cup body and moving mechanism are provided in the substrate treatment apparatus to supply vaporized solvent, then the solvent can be supplied to the wafer, but the footprint and manufacturing cost of the apparatus increase
Solution Approach 1:
The invention extracts and eliminates the complex cup body and moving mechanism from the apparatus structure. Instead, a simple linear flow path is created where vaporized solvent flows from the supply port through the wafer to the exhaust port, achieving solvent treatment without the need for complex mechanical components
Solution Approach 2:
The treatment process is segmented into distinct zones: a supply zone where vaporized solvent is introduced, a treatment zone where the solvent interacts with the wafer surface, and an exhaust zone where processed gas is removed. This segmentation allows for simplified apparatus design while maintaining effective solvent distribution
2Manufacturing precision
If vaporized solvent is supplied from a discharge port to improve resist pattern roughness, then surface smoothing can be achieved, but uniformity of treatment across the wafer deteriorates due to concentration variation
Solution Approach 1:
The invention creates different local conditions within the treatment chamber: the supply port region has high solvent concentration for effective smoothing, while the exhaust port region has lower concentration to prevent over-saturation. This spatial variation in concentration ensures uniform treatment across the entire wafer surface
Solution Approach 2:
The system dynamically controls solvent distribution by maintaining continuous gas flow that carries vaporized solvent from the supply port through the wafer to the exhaust port. This dynamic flow ensures fresh solvent continuously reaches different areas of the wafer, preventing concentration buildup and ensuring uniform treatment
3Manufacturing precision
If the supply amount of solvent is increased near the discharge port to improve smoothing, then surface roughness can be reduced, but the resist pattern may excessively swell and dissolve
Solution Approach 1:
The exhaust port is positioned to create a counter-flow that prevents excessive solvent accumulation near the supply port. The gas flow direction and pressure gradient are designed to carry solvent vapor across the wafer without allowing it to concentrate to levels that would cause pattern dissolution
Solution Approach 2:
The continuous gas flow maintains a steady state where vaporized solvent is constantly supplied and removed in balance. This continuous action prevents solvent buildup that would lead to pattern dissolution while ensuring sufficient solvent exposure for effective surface smoothing throughout the treatment process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents pattern dissolution and achieves high uniformity in surface smoothing, improving the roughness of resist patterns and reducing yield loss.
Implementation Method 1
the vaporized solvent flows on the wafer surface while adhering to the wafer
Implementation Method 2
the solvent permeates to the thickness area where the solvent permeates
Implementation Method 3
the proportion of molecules of the solvent colliding with the wafer
Data Source
AI summary
A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting the substrate on a stage in a treatment container; and repeating a plurality of times steps of supplying a solvent gas to a center portion of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask, and then supplying a drying gas for drying the solvent supplied to the substrate to the center portion of the substrate while exhausting the drying gas from the periphery of the substrate.