Crosslinkable Negative Resist Composition for Ultrafine Pattern Formation
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Solution Overview
Problem
Current resist pattern forming methods fail to achieve high sensitivity, high resolution, and small line edge roughness for ultrafine patterns with line widths of 30 nm or less, particularly due to issues like pattern collapse and film loss during development.
Innovation Solution
A resist pattern forming method using a crosslinkable negative resist composition with a specific polymer compound and an alkali developer concentration of 0.5 to 1.1 mass %, combined with continuous alkali developer supply, to achieve optimal film thickness and development conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the resist film is thinned to prevent pattern collapse, then pattern stability is improved, but film loss during development occurs causing disconnection and LER deterioration
Solution Approach 1:
The invention changes the chemical composition parameters of the resist film by incorporating specific polymer compounds (polyhydroxystyrene and polyphenolic compounds) with controlled molecular weights and ratios. This compositional parameter change enables the film to maintain sufficient thickness while achieving the desired pattern stability, avoiding the film loss and LER deterioration that occur with excessive thinning.
2Manufacturing precision
If conventional resist compositions and development conditions are used, then manufacturing simplicity is maintained, but ultrafine pattern resolution and nanoedge roughness are insufficient
Solution Approach 1:
The invention employs a composite resist composition containing multiple polymer compounds (polyhydroxystyrene and polyphenolic compounds) with specific molecular weight ranges and concentration ratios. This composite material approach achieves superior ultrafine pattern resolution and nanoedge roughness control while maintaining relatively simple development conditions using conventional alkali developers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of patterns with high sensitivity, high resolution, and small line edge roughness, effectively addressing the limitations of existing techniques by ensuring excellent pattern profile and etching resistance.
Implementation Method 1
a negative resist composition capable of undergoing negative conversion by a crosslinking reaction
Implementation Method 2
the film is patternwise exposed and then developed
Data Source
AI summary
A resist pattern forming method includes: in the following order, (1) a step of forming a film on a substrate by using a negative resist composition capable of undergoing negative conversion by a crosslinking reaction; (2) a step of exposing the film; and (4) a step of performing development by using an alkali developer after the exposing, wherein the negative resist composition contains (A) a polymer compound having a repeating unit represented by the following formula (I) as defined in the specification, a thickness of the film formed in the step (1) is from 15 to 40 nm, and an alkali component concentration in the alkali developer is from 0.5 to 1.1 mass %.