Resin Composition for Resist Pattern Insolubilization

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Solution Overview

Problem

Current lithographic technologies face challenges in forming fine resist patterns with line widths of 32 nm or less, as existing methods require expensive equipment or suffer from deformation of first-layer resist patterns during double exposure processes in liquid immersion lithography, leading to inaccurate line formation.

Innovation Solution

A resist pattern-forming method using a resist pattern-insolubilizing resin composition comprising a solvent and a resin with specific repeating units, including a hydroxyl group, applied in multiple layers to form insolubilized patterns that are insoluble in developers, allowing for precise formation of second resist patterns without deformation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If double exposure is used to form 32 nm patterns, then pattern density and complexity increase, but first-layer resist pattern deformation occurs leading to insufficient accuracy

Engineering Contradiction:

Improvepattern densityVSAvoidline formation accuracy

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies a resist pattern-insolubilizing resin composition to the first-layer resist pattern before the second exposure step. This preliminary action prevents the first-layer pattern from deforming during the subsequent second exposure and development process, thereby maintaining line formation accuracy while enabling double exposure for higher pattern density

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The resist pattern-insolubilizing resin composition acts as an intermediary layer between the first and second resist patterns. It stabilizes the first-layer pattern structure during the second exposure process, preventing direct interaction and deformation while allowing the second pattern to be formed accurately

Inventive Principle:

Principle #24Intermediary (Mediator)

2Manufacturing precision

If liquid immersion lithography is used for fine pattern formation, then resolution improves, but application is limited to 45 nmhp and cannot achieve 32 nm generation

Engineering Contradiction:

Improvepattern resolutionVSAvoidpattern size range

Core Design Contradiction:

Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent segments the lithographic process into multiple steps: first exposure to form initial patterns, application of insolubilizing resin composition, and second exposure to form additional patterns. This segmentation allows achieving 32 nm resolution by combining multiple exposures rather than relying on a single exposure step, thereby extending the applicable pattern size range beyond the 45 nmhp limitation of liquid immersion lithography

Inventive Principle:

Principle #1Segmentation

3Manufacturing precision

If expensive exposure systems are used to reduce wavelength for fine patterning, then line width control improves, but equipment cost increases

Engineering Contradiction:

Improveline width controlVSAvoidequipment cost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent uses a chemical amplification mechanism where a small amount of acid generated during exposure triggers a cascaded chemical reaction that amplifies the effect throughout the resist material. This copying/amplification mechanism allows achieving fine line width control with existing exposure systems rather than requiring expensive reduced-wavelength equipment

Inventive Principle:

Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the formation of accurate and precise resist patterns with improved line width control and reduced deformation, enhancing the capability to create complex and dense device patterns without the need for expensive equipment, thus overcoming the limitations of existing technologies.

Implementation Method 1

The resist pattern-insolubilizing resin composition is baked or UV-cured

Methodology Applied

Scientific EffectUV-curing: Photopolymerisation

Data Source

PatentUS9029067B2Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same

Publication Date: 2015.05.12 JSR CORPORATION

AI summary

A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2),wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1,wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.