Resist Composition for Lithography Defect Reduction
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Solution Overview
Problem
Conventional resist compositions fail to adequately address Exposure Latitude (EL) and mask error factor (MEF) issues, leading to an increased number of defects in the resist patterns produced.
Innovation Solution
A resist composition comprising a resin with specific structural units, an acid generator, and a solvent, where the resin is insoluble in alkali aqueous solution but becomes soluble upon acid action, and includes compounds represented by specific formulas to improve pattern quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist composition is used, then manufacturing process is simple, but Exposure Latitude and mask error factor are not satisfied and defect number increases
Solution Approach 1:
The patent uses a composite resin system comprising multiple specific components: a polymer obtained by polymerizing compounds of formulas (u-A), (u-B), (u-C), and (u-D); a resin being insoluble or poorly soluble in alkali aqueous solution but becoming soluble by acid action; and a polymer obtained by polymerizing compound (u-B). This composite material structure enables simultaneous improvement of Exposure Latitude and mask error factor while controlling defect numbers, resolving the contradiction between manufacturing precision and composition complexity.
Solution Approach 2:
The patent specifies precise compositional parameters including the polymerization of particular compounds with defined structural formulas, the solubility characteristics of the resin in alkali aqueous solution, and the specific ratio of components. By controlling these chemical and physical parameters, the resist composition achieves improved Exposure Latitude and mask error factor performance.
2Reliability
If conventional resist composition is used, then composition structure is simple, but number of defect in resist pattern increases
Solution Approach 1:
The patent employs a multi-component composite resin system including polymers from specific compound formulas (u-A), (u-B), (u-C), and (u-D), along with a specially designed resin with controlled solubility characteristics. This composite structure reduces defect numbers in resist patterns by improving pattern formation uniformity and resistance to processing variations.
Solution Approach 2:
The patent introduces a resin with specific local solubility properties - insoluble or poorly soluble in alkali aqueous solution but becoming soluble by acid action. This localized solubility control within the resist composition enables precise pattern definition and reduces defects by allowing differential etching and development behavior in different regions of the resist layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition effectively reduces defects in resist patterns by enhancing the Exposure Latitude and mask error factor, resulting in improved pattern quality and resolution.
Implementation Method 1
a polymer obtained by polymerizing a compound represented by the formula (u-A) and a compound represented by the formula (u-B), a polymer obtained by polymerizing a compound represented by the formula (u-B), a compound represented by the formula (u-C) and a compound represented by the formula (u-D); an acid generator
Implementation Method 2
a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid
Data Source
AI summary
A resist composition contains (A1) a resin having a structural unit represented by the formula (I), (A2) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator, and (D) at least one compound selected from the group consisting of a compound represented by the formula (II1) and a compound represented by the formula (II2),wherein R1, A1, R2, R6, X1, X2, R3, R4 and R5 are defined in the specification.