Positive Resist Composition for Lithography Pattern Roughness
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Solution Overview
Problem
In the field of lithography, particularly for semiconductor and liquid crystal display element production, there is a need for resist materials that can form patterns with reduced roughness and improved shape fidelity as pattern miniaturization advances, and existing chemically amplified positive resist compositions do not adequately address the challenge of reducing line width roughness and maintaining excellent lithography properties.
Innovation Solution
A positive resist composition is developed, comprising a resin component with specific structural units derived from acrylate esters containing acid-dissociable dissolution inhibiting groups and —SO2— containing cyclic groups, combined with an onium salt acid generator, which enhances the solubility in alkali developing solutions upon exposure, thereby reducing pattern roughness and improving lithography properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified positive resist compositions are used, then lithography properties such as sensitivity and resolution can be achieved, but line width roughness and pattern shape fidelity deteriorate
Solution Approach 1:
The patent uses a composite resin system combining acrylic resin (providing transparency and base structure) with cycloolefin resin (providing structural integrity and controlled dissolution), creating a material that simultaneously achieves smooth pattern profiles and reliable lithography performance
Solution Approach 2:
The resist composition incorporates specific functional groups at controlled concentrations: carboxylic acid groups (5-50 mmol/L) for controlled dissolution, sulfone groups for polarity and adhesion, and hydroxyl groups for hydrogen bonding. This local functional differentiation enables precise control over pattern formation while maintaining overall lithography reliability
2Measurement precision
If pattern miniaturization is pursued, then resolution and sensitivity improve, but pattern shape fidelity and roughness control worsen
Solution Approach 1:
The patent systematically adjusts critical parameters including resin molecular weight distribution, functional group concentrations (carboxylic acid: 5-50 mmol/L, sulfone: 1-100 mmol/L, hydroxyl: 1-100 mmol/L), and solvent composition ratios to optimize the balance between resolution enhancement and pattern shape fidelity during miniaturization
Solution Approach 2:
The patent introduces specific intermediary compounds and solvents that mediate between the conflicting requirements of high resolution and shape fidelity, including controlled use of dissolution inhibitors and specific solvent systems that provide gradual dissolution kinetics for smoother pattern profiles
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of resist patterns with reduced roughness and improved shape fidelity, enhancing sensitivity, resolution, exposure latitude, and mask reproducibility, while maintaining excellent solubility in alkali developing solutions.
Implementation Method 1
an acid-generator component (B) which generates acid upon exposure
Implementation Method 2
a base material component that exhibits a changed solubility in an alkali developing solution under the action of acid
Data Source
AI summary
A positive resist composition including a resin component (A1) having a structural unit (a1) derived from an acrylate ester which may have an atom other than hydrogen or a group bonded to the carbon atom on the α position and containing an acid dissociable, dissolution inhibiting group, and a structural unit (a0) containing an —SO2— containing cyclic group; a compound (C1) represented by general formula (c1) shown below; and an acid-generator component (B) which generates acid upon exposure, wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Y1 represents a divalent aliphatic hydrocarbon group; R1 represents a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group; p represents an integer of 1 to 10; and A+ represents an organic cation.