Aromatic Resist Underlayer Composition for Thin EUV Film Uniformity
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Solution Overview
Problem
In EUV lithography, resist underlayer films face challenges such as non-uniformity, pinholes, and aggregation due to substrate influence, leading to defects and poor adhesion in resist patterns, especially at critical dimensions of 32 nm or less, and require enhanced sensitivity and reduced line width roughness.
Innovation Solution
A resist underlayer film-forming composition comprising a polymer with specific aromatic ring structures and a solvent, which forms a thin, uniform film with improved adhesion and resistance to organic solvents, allowing for finer pattern resolution and reduced line width roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If a resist underlayer film is made thinner to achieve finer pattern resolution (32 nm or less), then the line width can be reduced, but the film becomes non-uniform and develops defects such as pinholes and aggregations
Solution Approach 1:
The patent changes the chemical parameters of the polymer by introducing specific aromatic ring structures (naphthalene, anthracene, phenanthrene, pyrene, or triphenylene groups) to modify the film-forming properties. This allows the film to maintain uniformity even at reduced thickness while achieving the required fine line width
Solution Approach 2:
The patent creates a composite polymer structure by combining aromatic ring-containing monomers with specific functional groups. This composite approach enhances the film's structural integrity and uniformity at thin dimensions while maintaining the ability to form fine patterns
2Length of moving object
If a resist underlayer film is made thinner, then finer patterns can be formed, but adhesion and patternability deteriorate
Solution Approach 1:
The patent modifies the chemical composition parameters by incorporating specific aromatic structures that enhance interfacial adhesion. These aromatic groups improve the interaction between the underlayer film and the resist pattern, ensuring reliable adhesion even when the film thickness is reduced for finer patterning
3Device complexity
If conventional polymers are used in resist underlayer film, then the composition is simpler, but the film shows poor uniformity and defects at thin dimensions
Solution Approach 1:
The patent changes the molecular structure parameters by introducing aromatic ring systems into the polymer backbone. This structural modification improves film uniformity and reduces defects without significantly complicating the overall composition or manufacturing process
Data Source
AI summary
A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A resist underlayer film-forming composition includes a solvent and a polymer having a unit structure represented by formula (I):(in formula (I), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, a methyl group, or an ethyl group, Q1 represents a divalent organic group, R1 represents a tetravalent organic group including a C6-40 aromatic ring structure, and L1 and L2 each independently represent a hydrogen atom or a C1-10 alkyl group optionally substituted with a hydroxy group and optionally interrupted by an oxygen atom).