Array Substrate Alloy Electrodes for Brightness Uniformity
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Solution Overview
Problem
Current display technologies, particularly in flexible OLEDs, face challenges in achieving uniform brightness, which is crucial for high-end mobile devices, as existing solutions fail to effectively enhance conductivity and bending resistance without increasing process costs.
Innovation Solution
The array substrate incorporates a thin film transistor structure with alloy materials like Al, Ge, Nd, Ta, Zr, Ni, or La for the gate and source drain electrode layers, featuring a double-layer VDD trace design and a mesh structure for the gate electrode layer, along with a planarization layer and organic layer to improve conductivity and bending characteristics, thereby enhancing brightness uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional materials and structures are used for gate and source drain electrode layers, then manufacturing cost is reduced, but conductivity and brightness uniformity deteriorate
Solution Approach 1:
The patent employs composite material structures for the gate electrode layer and source drain electrode layer, combining multiple materials with complementary properties to achieve both high conductivity and cost-effectiveness. The composite structure allows optimization of electrical performance while controlling manufacturing costs through selective material placement and utilization.
Solution Approach 2:
The patent introduces a double-layer VDD trace design that adds a dimensional aspect to the electrode structure. By creating multiple layers of voltage supply traces, the design improves conductivity and brightness uniformity without significantly increasing process complexity, as the additional layer can be integrated into the existing manufacturing flow.
2Reliability
If conventional single-layer electrode structure is used, then device complexity is reduced, but conductivity and bending resistance deteriorate
Solution Approach 1:
The patent transitions from a single-layer to a double-layer electrode structure, adding a vertical dimension to improve performance. The double-layer VDD trace design provides enhanced conductivity and bending resistance by distributing electrical pathways across multiple layers, while the manufacturing process remains compatible with existing fabrication capabilities.
Solution Approach 2:
The electrode structure is segmented into multiple functional layers, with each layer serving specific purposes. The gate electrode layer and source drain electrode layer are separately optimized, and the double-layer VDD trace design divides the voltage supply function across two layers, improving overall reliability without excessive complexity.
3Reliability
If alloy materials are used for gate and source drain electrode layers, then conductivity is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent uses alloy materials for the gate and source drain electrode layers, combining multiple metallic elements to achieve superior conductivity. The alloy composition is optimized to provide high electrical performance while remaining compatible with standard thin-film deposition processes, avoiding the need for specialized manufacturing equipment or procedures.
Data Source
AI summary
The present application provides an array substrate and a manufacturing method of the same, the array substrate includes a display region, the display region includes a thin film transistor structure layer including a gate electrode layer and a source drain electrode layer, wherein the gate electrode layer and the source drain electrode layer are made of an alloy material including one or a group selected from Al, Ge, Nd, Ta, Zr, Ni, or La.