Array Substrate Parallel Common Electrode Resistance Reduction

The patent divides the common electrode into multiple segments (first common electrode line and second common electrode line) that are disposed in different layers. This segmentation allows the electrode structure to achieve lower resistance through multiple pathways without requiring an increase in the line width of individual electrodes, thereby maintaining the aperture ratio.

The patent transitions from a single-layer common electrode structure to a multi-layer structure by disposing the first common electrode line in one layer and the second common electrode line in another layer. This dimensional change enables resistance reduction through vertical stacking and parallel pathways without consuming additional horizontal space that would reduce the aperture ratio.

The patent merges the protective function with the existing gate metal layers. The first gate metal layer and second gate metal layer serve dual purposes: they function as gate electrodes for the thin film transistor and simultaneously act as protective shields against exterior light irradiation. This merging eliminates the need for additional protective structures that would block light and reduce transmittance.

The gate metal layers are designed to perform multiple functions: electrical gating control and optical shielding. By making the gate metal layers serve both purposes, the patent prevents light-induced leakage current without introducing separate protective elements that would compromise display transmittance and picture quality.